RM24C128C-LSNI-B Allicdata Electronics
Allicdata Part #:

RM24C128C-LSNI-B-ND

Manufacturer Part#:

RM24C128C-LSNI-B

Price: $ 0.23
Product Category:

Integrated Circuits (ICs)

Manufacturer: Adesto Technologies
Short Description: IC CBRAM 128K I2C 1MHZ 8SOIC
More Detail: CBRAM Memory IC 128kb (64B Page Size) I²C 1MHz 8-...
DataSheet: RM24C128C-LSNI-B datasheetRM24C128C-LSNI-B Datasheet/PDF
Quantity: 1000
9800 +: $ 0.21268
Stock 1000Can Ship Immediately
$ 0.23
Specifications
Series: Mavriq™
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: CBRAM®
Technology: CBRAM
Memory Size: 128kb (64B Page Size)
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 100µs, 2.5ms
Memory Interface: I²C
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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Memory is essential for various computing tasks, and there are numerous kinds of memory on the market currently. RM24C128C-LSNI-B is one of long-established memory in the world, with its wide application fields and sophisticated working principle.

The RM24C128C-LSNI-B is a 128K-bit serial-electrically erasable programmable read-only memory, usually referred to as EEPROM. It is a non-volatile memory chip which can be easily mounted on printed circuit boards. It is mainly used in applications such as data storage, measurement and control, automotive electronics, medical diagnostics, and factory automation.

The working principle of the RM24C128C-LSNI-B memory is quite complicated. The chip contains two parts, a ROM section and an EEPROM section. The ROM section includes a 8K-bit ROM, which stores all of the system\'s essential instructions. The EEPROM section has 128K-bits of capacity, used to store custom data, such as user-defined settings and system backup files.

The EEPROM section of the RM24C128C-LSNI-B memory can be written and erased electronically. To write new data to the memory, the memory must first be erased with a special command. After that, the data can be written to the memory with a programmatic instruction. The data stored in the EEPROM section is non-volatile, meaning that it will remain stored even if the system loses its power supply.

The RM24C128C-LSNI-B memory is designed with a low power consumption capability, making it easy to use in battery-powered systems. It is also designed to be electrically rewritable, meaning that it can be reprogrammed without having to remove the microcontroller or any other components.

It is important to note that the RM24C128C-LSNI-B memory is only available in a single package size. If the required data storage capacity is larger than 128K-bits, the system should be designed to use two or more of the memory chips in order to meet the data storage requirements. Additionally, the reliable operation of this memory device requires that the system\'s voltage is always within the specified operating range.

In conclusion, RM24C128C-LSNI-B memory is a reliable and versatile memory device which can be used in large-scale applications. It has a proven record of reliability and it is easy to use and relatively inexpensive compared to other types of EEPROMs. The working principle of the RM24C128C-LSNI-B memory is quite sophisticated but this is the trade-off for its long-term performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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