RM24EP128A-BSNC-T

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	CBRAM®
Technology:	CBRAM
Memory Size:	128kb (64B Page Size)
Clock Frequency:	1MHz
Write Cycle Time - Word, Page:	100µs, 5ms
Memory Interface:	I²C
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC

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RM24EP128A-BSNC-T Memory

The RM24EP128A-BSNC-T is a serial presence detect (SPD) Electrically Erasable Programmable Read-Only Memory (EEPROM) suitable for use in a range of applications. The memory device features a 1M bit capacity and is compatible with JEDEC standards.The RM24EP128A-BSNC-T has wide application fields such as servers and desktop computers, gaming systems, embedded systems, automotive and industrial components. It can be used in a range of applications such as modifying BIOS settings, program data storage and communication device memory. The memory device can store data and erase/write data via parallel and serial interfaces.The RM24EP128A-BSNC-T memory device provides a quick, reliable and flexible way to store data. The memory device is designed to offer a wide range of features such as non-volatile memory, low-power consumption and fast programming/erasing times. The memory device also features a robust security architecture and supports Error Correction Code (ECC) for better data storage reliability.The RM24EP128A-BSNC-T memory device uses a 2-wire interface, which is a simple serial bus switching system. The interface consists of two signal lines, which are Clock (SCL) and Data (SDA). The memory device can communicate with an external controller through serial data transfers. The external controller uses these two signal lines to read/write data from/to the memory device.The RM24EP128A-BSNC-T memory device provides a fast and reliable way to store data. The device is designed to offer a wide range of features such as non-volatile memory, low-power consumption and fast programming/erasing times. The device also features a robust security architecture and supports Error Correction Code (ECC) for better data storage reliability.The RM24EP128A-BSNC-T memory device has a variety of commands and modes to facilitate data transfer and operations. The device can access/erase data using standard commands such as Byte Autoprogramming, Page Autoprogramming, Erase All, Erase Sector and many others. These commands allow the device to quickly access, read and write data from any location in the memory.The RM24EP128A-BSNC-T memory device features two operational modes, the WV (write/verify) mode and the ECC (error-correction code) mode. The WV mode is designed to prevent data corruption caused by unanticipated power failures and the ECC mode is designed to detect and correct naturally occurring errors when writing data to the memory.The RM24EP128A-BSNC-T memory device is designed to be extremely reliable and efficient. The device offers fast programming times and can erase/write data quickly and easily. The device is also very secure, thanks to its robust security architecture and support for ECC for data storage reliability. In addition, the device features low power consumption and is extremely reliable, making it ideal for a wide range of applications.

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