RM24C64DS-LSNI-B

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The RM24C64DS-LSNI-B is a 64 Kbit I2C non-volatile Memory that comes in a SOT23-6 package, and is ideal for applications needing to store a small amount of data. The RM24C64DS-LSNI-B offers the reliability of a non-volatile programmable read only memory (PROM) with the advantage of high-speed access and low cost, making it an excellent choice for applications needing to partially replace flash, EEProm, SRAM or EEPROM.

The RM24C64DS-LSNI-B is compatible with most I2C bus systems and operates at supply voltages of 2.5V to 5.5V. It features a 64 Kbit of non-volatile FRAM that can be programmed at high speed speeds of up to 1Mbit/second and conventional write speed of up to 0.7Kbits/second. It is available in two options: The 16 Kbit mode and the 64Kbit mode. The 16 Kbit mode allows the device to dedicate up to 4 I2C addresses for each memory bank, where each chosen byte can be programmed up to 32 times during operation. The 64 Kbit mode on the other hand, allows up to eight I2C addresses for each memory bank, but each chosen byte can only be programmed a maximum of 8 times during operation.

Besides non-volatile data storage, the RM24C64DS-LSNI-B also provides unique features such as Self-timed write protection, Self-timed write cycle limitation and Signature Capture. With Self-timed write protection, all write cycles are limited to a set amount of time due to the way the write protection pins are configured. This helps ensure that all write cycles are completed without causing any harm to the device as it will suspend the write process once the time has expired. On the other hand, the Self-timed write cycle limitation helps to limit the amount of write cycles to prevent any potential data corruption that may occur due to excessive write cycles.

The RM24C64DS-LSNI-B also comes with a Signature Capture feature that helps ensure that any data written to the memory device is correct and valid. This feature captures and stores an accurately quantified digital signature at the end of each write cycle. The digital signature is then used to verify the integrity of the data written to the device even if the write cycles continue over multiple I2C specific memory banks.

The RM24C64DS-LSNI-B is highly recommended for applications that need to store and recall relatively small amounts of data such as medical data collection, up to 8-bit embedded microcontroller applications, and radio frequency identification (RFID) systems. It also works well for applications that require low power consumption, such as energy harvesting and low count transceiver systems.

In conclusion, the RM24C64DS-LSNI-B is an excellent choice for applications that require non-volatile data storage and reliability. Its robust features such as Self-Timed Write Protection and Signature Capture, high speed write and read operations, and small size make it the ideal solution for a wide range of applications.

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