RM24EP64C-BSNC-B Allicdata Electronics
Allicdata Part #:

1265-1335-ND

Manufacturer Part#:

RM24EP64C-BSNC-B

Price: $ 0.67
Product Category:

Integrated Circuits (ICs)

Manufacturer: Adesto Technologies
Short Description: CBRAM 64K SOIC-N, MEDICAL, 2.7V
More Detail: Memory IC 8-SOIC
DataSheet: RM24EP64C-BSNC-B datasheetRM24EP64C-BSNC-B Datasheet/PDF
Quantity: 3724
1 +: $ 0.61110
10 +: $ 0.55881
25 +: $ 0.55163
50 +: $ 0.54860
100 +: $ 0.49052
250 +: $ 0.48628
500 +: $ 0.47920
1000 +: $ 0.46192
5000 +: $ 0.42083
Stock 3724Can Ship Immediately
$ 0.67
Specifications
Series: *
Packaging: Tube 
Part Status: Active
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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The RM24EP64C-BSNC-B is a type of embedded dynamic random access memory (DRAM) device. It is primarily used in applications that require high performance and low latency but also offer some flexibility in terms of memory size. This makes it ideal for use in applications that require large amounts of data to be quickly and reliably accessed. This device has various advanced features such as self-refreshing operation and on-chip error correction.The RM24EP64C-BSNC-B device utilizes a dynamic random access memory (DRAM) cell. This memory cell is made up of a capacitor and a basic transistor. This dynamic nature of the cell allows it to store data for a short period of time and to quickly retrieve it. The device also has on-chip error correction, which helps to ensure that any data that is stored is accurate and valid. The RM24EP64C-BSNC-B device is primarily used in embedded applications and is optimized for such applications. As such, it can be easily integrated into devices such as medical equipment, communications systems, or automation systems. It offers high data throughput, low power consumption, and fast read/write access times. The device is fully compliant with the JEDEC DRAM standards, ensuring interoperability with other memory systems. The working principle of the RM24EP64C-BSNC-B device is quite simple. When data is to be written to a cell, a charge is applied to the transistor part of the memory cell. This causes the data stored on the transistor part of the cell to be changed. When data is to be read from the cell, the charge is removed from the transistor part of the cell, causing the stored data to be released. In terms of its application field, the RM24EP64C-BSNC-B device is primarily used in embedded applications. It is well suited for such applications due to its low power consumption, fast access times, and high data throughput. It can also be used in a variety of other applications that require reliable high-speed data access such as medical devices or automation systems. Overall, the RM24EP64C-BSNC-B device is an excellent choice for applications that require high data throughput and low latency. It offers advanced features such as on-chip error correction, self-refreshing operation, and fully compliant with the JEDEC DRAM standards. This device is also highly suited for embedded applications due to its low power consumption and fast access times.

The specific data is subject to PDF, and the above content is for reference

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