Allicdata Part #: | 1265-1204-2-ND |
Manufacturer Part#: |
RM24C128C-LTAI-T |
Price: | $ 0.28 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Adesto Technologies |
Short Description: | IC CBRAM 128K I2C 1MHZ 8TSSOP |
More Detail: | CBRAM Memory IC 128kb (64B Page Size) I²C 1MHz 8-... |
DataSheet: | RM24C128C-LTAI-T Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.25319 |
8000 +: | $ 0.25049 |
12000 +: | $ 0.24223 |
Series: | Mavriq™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | CBRAM® |
Technology: | CBRAM |
Memory Size: | 128kb (64B Page Size) |
Clock Frequency: | 1MHz |
Write Cycle Time - Word, Page: | 100µs, 2.5ms |
Memory Interface: | I²C |
Voltage - Supply: | 1.65 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RM24C128C-LTAI-T is a kind of memory, which belongs to the group of nonvolatile memories and uses a technology called ferroelectric RAM. It has been widely used in many applications both in the consumer and industrial markets. With its excellent non-volatility, high speed, low power consumption, and tiny footprint, this device has become an important part of embedded systems and other applications which require reliable storage of data. In this article, we will discuss the application field of the RM24C128C-LTAI-T, as well as its working principle.
The RM24C128C-LTAI-T is designed for use in non-volatile memory applications such as programmable logic controllers (PLCs), automotive applications, datalogging, and digital audio recording. It is highly suitable for applications that require rapid data writing and reading, or applications which require data to be retained even in the event of a power outage. Additionally, the device offers excellent low power consumption, as it operates on a single-supply voltage.
In terms of its working principle, the RM24C128C-LTAI-T works by storing information on a ferroelectric layer. A charging and discharging process is used to change the data in the ferroelectric layer, allowing information to be written, erased, and read quickly. The device also has built-in error correction which ensures that data is stored reliably. Due to its high data retention and write-ability, this device is ideal for applications that require reliable non-volatile storage of data.
Overall, the RM24C128C-LTAI-T is a reliable and efficient device designed for non-volatile memory applications. Its combination of high speed, excellent data retention and write-ability, low power consumption, and tiny footprint make it an ideal choice for many different types of applications. In addition, the built-in error correction ensures that data is retained reliably even in the event of a power outage. As such, the RM24C128C-LTAI-T is an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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