RM24EP64B-BSNC-T

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The RM24EP64B-BSNC-T is a memory device, used for storing and managing data within a system. It is a high-speed, dual-voltage memory system which offers a range of features to provide superior performance and flexibility. It is used in a variety of applications, from consumer electronics to industrial automation systems.

The RM24EP64B-BSNC-T is a dual-voltage 8-bit CMOS static RAM designed for industrial applications. It offers a wide operating voltage range of 1.14V-2.7V, with a maximum current consumption of 4.5mA. Its fast access time of 30ns (10ns read, 18ms write) make it well suited for many applications. It can store up to 64kB of data, organized into 81024 x 8-bit pages. It is designed to provide reliable operation and high speed in a wide array of systems, including medical equipment, industrial robotics, and military electronics.

The RM24EP64B-BSNC-T features an advanced CMOS architecture for minimal power consumption and a low standby current of 0.4mA. It also includes an advanced programming algorithm for efficient data management. The device is rated for up to 500,000 write/erase cycles, and is capable of operating in temperatures from -55°C to +125°C.

The working principle of the RM24EP64B-BSNC-T is based on the use of capacitively-coupled memory cells. A write operation at a particular cell is enabled by charging a capacitor located at the selected cell. A read operation is performed by discharging the capacitor and determining its state. The discharge time is then compared with the known time of a reference capacitor, and the state of the cell can be determined based on the time difference.

The RM24EP64B-BSNC-T is ideal for demanding applications with high speed and reliability requirements. It\'s low power consumption and wide operating temperature range make it suitable for a range of industrial, medical and military applications. Its fast access time and advanced programming algorithm make it a great choice for high-performance data storage and management applications.

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