RM24C64C-LSNI-B

Series:	Mavriq™
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	CBRAM®
Technology:	CBRAM
Memory Size:	64kb (32B Page Size)
Clock Frequency:	1MHz
Write Cycle Time - Word, Page:	100µs, 1.2ms
Memory Interface:	I²C
Voltage - Supply:	1.65 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC

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Introduction

The RM24C64C-LSNI-B is a highly efficient memory module developed by Renesas. A memory module is a device used to store data in computer systems. It is composed of several individual memory chips including RAM, ROM, EPROM, EEPROM, SRAM, and DRAM. The RM24C64C-LSNI-B memory module is specifically designed for embedded devices such as smartphones, industrial robots, and digital audio/video devices.

Application Field

The RM24C64C-LSNI-B is most often used in embedded devices due to its high reliability. It offers a capacity of 64K bytes of Flash memory and 32K bytes of SRAM memory. It is also capable of supporting up to 256Byte EEPROM. This type of memory is suitable for applications that require high performance and reliability such as those found in industrial robots, digital audio/video devices, and embedded systems.The RM24C64C-LSNI-B can also be used to store data of all types such as text, images, audio, and video. It is capable of storing up to 64KB of data and is also capable of supporting up to 32KB of SRAM.

Working Principle

The RM24C64C-LSNI-B is a non-volatile memory module that has a built-in Write Cache technology. This technology helps to improve write performance by caching write operations and then committing them to the underlying Flash memory. This helps to reduce the write time while also providing higher levels of data integrity and reliability.The RM24C64C-LSNI-B also uses a special architecture that allows it to store data in multiple pages of memory. This allows for fast and reliable access times. Data is also organized in an addressable manner, meaning that data is stored in an addressable grid of bytes. Each addressable grid can be accessed by special software commands.The RM24C64C-LSNI-B also has a built-in interrupt controller for managing interrupts that are generated by the memory module. This helps to ensure that the interrupt will be handled in a timely manner and will not cause any interrupt-related problems.

Conclusion

The RM24C64C-LSNI-B is a highly efficient and reliable memory module from Renesas. It is capable of storing up to 64KB of data and supporting up to 32KB of SRAM as well. It is especially suitable for embedded applications as it provides fast and reliable access times. The module also uses a Write Cache technology to reduce write time and to provide higher levels of data integrity and reliability. Lastly, the module has an interrupt controller allowing it to manage interrupts that are generated by the memory module.

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