RM24C128A-BSNC-B

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The RM24C128A-BSNC-B is a 128 kilobits of serial electrically erasable programmable read only memory (EEPROM). The memory uses a simple two-wire interface, making it suitable for low cost, low power applications.

Essentially, the RM24C128A-BSNC-B uses two small internal EEPROM cells, each of which can hold 2048 bytes of data. The memory can be accessed using two different memory modes, the sequential access mode, and the random access mode. In the sequential access mode, the data is read and written into the EEPROM one byte at a time from any address. In the random access mode, the memory can be accessed randomly i.e. any location can be individually selected for data read or write.

The RM24C128A-BSNC-B is suitable for a variety of applications, such as for storing large amounts of factory or customer configuration data, for storing system control software, for storing variable data and for firmware applications. The main application area for the RM24C128A-BSNC-B is in the field of memory devices, especially for digital systems.

The RM24C128A-BSNC-B consists of two basic components, the "External Memory Device" (EMD) and the "Buffer & Interface" (BI). The EMD is used to store and retrieve the data, and it consists of an array of memory cells arranged in a physical form factor of a plastic encapsulated chip. The BI is used to provide an interface to the EMD and to provide buffering for data transfer.

The RM24C128A-BSNC-B has a wide operating temperature range and is capable of retaining data for up to 100 years in a non-volatile state. The device can be powered by either a 3 V or 5 V supply and its pins are TTL/CMOS compatible. The RM24C128A-BSNC-B has a maximum clock frequency of 100 kHz, making it suitable for low speed applications.

The most important feature of the RM24C128A-BSNC-B is that it has the capability to erase and reprogram the memory without the need of an external power supply. This feature makes the device ideal for applications where the data needs to be updated frequently or in applications where the data needs to be securely stored. This feature is known as “Self Programming” or “Self writing”.

The RM24C128A-BSNC-B has a number of features that make it suitable for use in embedded systems, such as support for address auto increment, support for blocking write access, support for multiple sub arrays, support for hardware and software selection of data sizes and support for on-chip error correction. Additionally, the RM24C128A-BSNC-B is fully compatible with the engineering reference standard 8-bit Parallel and Serial CMOS EEPROM architecture.

The RM24C128A-BSNC-B is designed to be optimized for easy integration into modern electronics designs and applications. The RM24C128A-BSNC-B is also RoHS compliant to ensure that it can be used in hazardous environments.

In conclusion, the RM24C128A-BSNC-B is an advanced MEMORY device that has a number of features that make it suitable for use in a variety of applications. Its wide operating temperature range, non-volatile memory characteristics, low power requirements and self programming capabilities make it a popular choice for memory device applications. The RM24C128A-BSNC-B is a reliable device that is sure to meet the requirements of any customer who needs a reliable and efficient memory device.

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