RM24C256DS-LSNI-B

Series:	Mavriq™
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	CBRAM®
Technology:	CBRAM
Memory Size:	256kb (64B Page Size)
Clock Frequency:	1MHz
Write Cycle Time - Word, Page:	100µs, 2.5ms
Memory Interface:	I²C
Voltage - Supply:	1.65 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC

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Memory is a device that can store digital data. It is a physical element of almost all digital systems. There are many different types of memory, including ROM and RAM. RM24C256DS-LSNI-B is a type of ROM (read-only memory) used in many applications such as automotive electronics, industrial computer, consumer electronics, among others. In this article, we will discuss the application field and the working principle of RM24C256DS-LSNI-B.RM24C256DS-LSNI-B is a type of non-volatile, 32-Kbit I2C EEPROM memory. Its memory density is 256K bits (32K × 8 bits). This type of memory device provides optimal cost and performance for many applications, especially automotive electronics and consumer electronics.RM24C256DS-LSNI-B is widely used in applications such as garage door openers, home security systems, automotive navigation systems, home automation systems, consumer audio systems, remote controls, embedded industrial computer, and consumer audio systems.In terms of working principle, RM24C256DS-LSNI-B uses two-wire digital interfaces I2C. This type of memory has two main parts: the memory array, which is the actual memory cells, and the controller, which is responsible for accessing and manipulating the data stored in the memory array.The RM24C256DS-LSNI-B has a capacitive memory structure and can store data in up to 32K bits. This device offers fast downloading speed and is resistant to shock, vibration, and dust. The device can also withstand a peak temperature of -40°C to +105°C, as well as offering excellent stability over a wide range of temperatures.RM24C256DS-LSNI-B is also equipped with an old-style write protection and a write-protect bit. With the write-protect bit, the unwanted write operation can be blocked easily. This device is also capable of carrying out a data page write operation, which enables it to write data quickly and efficiently.RM24C256DS-LSNI-B is designed to consume very low power, making it ideal for applications where low power consumption is important. It can operate at a supply voltage of 1.8V to 5.5V and can be interfaced with an I2C bus.In summary, RM24C256DS-LSNI-B is an advantageous memory device as it offers a density of up to 32K bits and a maximum write speed of 5MHz. It also has a low power consumption and is capable of storing data over a wide range of temperatures. Furthermore, it is resistant to shock, vibration and dust, thus making it ideal for use in areas where these types of environments are common. It is widely used in automotive electronics, consumer electronics, and embedded industrial computer applications.

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