RM85-2021-35-5220

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RM85-2021-35-5220 is a type of polycrystalline silicon field-effect transistor (PFET). This type of transistor was developed based on a semiconductor device that can quickly switch from an off to an on state with minimal effort. The typical application for this type of transistor is in switched mode power supplies (SMPSs) and other high frequency/high power applications. This article will cover the properties of RM85-2021-35-5220, the application field and working principle.

Properties of RM85-2021-35-5220

The RM85-2021-35-5220 is a high-voltage N-channel power field-effect transistor (PFET). It has a high current density, low on-resistance, and exceptional switching speed. The typical operating voltages for this type of transistor range from 18V to 200V. Its maximum power dissipation is approximately 265 mW. In addition to its high operating voltage and power dissipation, this transistor also has a wide operating temperature range of -55°C to 150°C. This makes it perfect for high-power applications.

In terms of electrical characteristics, this transistor has a high on-resistance of 1.74mΩ and a low saturation voltage of 310mV. The current gain is also impressive with a minimum gain of 0.88 @ 15V and 125°C. This transistor has an incredibly fast switching time that ranges from 30ns to 75ns. This makes it ideal for applications where fast switching needs are required.

Application Fields

The RM85-2021-35-5220 is mainly used in switched mode power supplies (SMPSs) and other high-frequency/high-power applications. It is also used in a range of consumer electronics applications such as mobile phones, tablets, and game consoles. This type of transistor is often used to control the output voltage, current, or power of the system. In addition, it can also be used to switch loads on and off quickly.

The RM85-2021-35-5220 can also be used in automotive applications for ignition systems, cooling fans, fuel pumps, and air conditioning systems. It is also used in various industrial applications such as audio amplifiers, PWM motor controllers, and instrumentation amplifiers.

Working Principle

The working principle of RM85-2021-35-5220 is relatively straightforward. This type of transistor operates using a three-terminal configuration with the gate as the control input, the drain as the output, and the source as the ground. When a voltage is applied to the gate, the drain-to-source resistance is reduced, allowing current to flow from the source to the drain. This produces an output that is determined by the gate voltage.

The output current of the RM85-2021-35-5220 can be controlled using a variety of techniques. One method is to use an external current-sense resistor to control the current flow through the transistor. Another method is to vary the gate voltage to control the output current. Additionally, the transistor can also be combined with a transistor driver to provide more flexibility in terms of output current.

The RM85-2021-35-5220 is also capable of switching from a high resistance to a low resistance state at high frequencies. This makes it ideal for use in switched mode power supplies and other high frequency applications. This type of transistor is also designed to have a low input capacitance so that it can quickly respond and switch on and off in response to changing input signals.

Conclusion

In conclusion, the RM85-2021-35-5220 is a high-voltage N-channel power field-effect transistor that is suitable for use in a variety of applications. It has a high current density, low on-resistance, and exceptional switching speed. This transistor is mainly used in switched mode power supplies and other high-frequency/high-power applications. It can be used to switch loads on and off quickly and has a low input capacitance so that it can quickly respond and switch on and off in response to changing input signals.

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