RS1AL RTG

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RS1AL Rectified-Threshold Gate (RTG) devices are a type of diode designed to serve both rectifying and thresholding capabilities at the same time. Combining the two functions in one device reduces the overall size of the circuit, leaving more room for other components. Furthermore, RS1AL RTG devices reduce the amount of power consumed compared to separate devices, resulting in overall greater efficiency.

RS1AL RTG devices are applied most commonly in switching applications, where they control the flow of current from one device or circuit to another. The most common example is in power-supplied circuits, where RS1AL RTG devices protect circuits from over-current by regulating the on and off states for the power supply.

In an RS1AL RTG device, a P-channel field effect transistor (FET) is used to provide a low-resistance path between the circuit’s input and output. When the voltage across the device\'s gate is above a certain threshold, the P-channel FET is activated and current flows. When the voltage across the gate is below the threshold, the FET is off, and current does not flow.

The two main types of RS1AL RTG devices are single-channel and dual-channel. Single-channel devices contain a single P-channel FET and are typically used in AC applications, where voltage and current cycles between positive and negative. In dual-channel devices, two P-channel FETs are used, and are used in DC applications or where a high precision control of current is required.

One of the most important performance indicators for RS1AL RTG devices is the threshold voltage. This is the voltage level at which the device’s FET is switched on or off. The factory-set threshold voltage level is typically around 0.75 V. However, some devices are available with adjustable voltage thresholds, allowing users to change the on/off transitions.

In general, RS1AL RTG devices have a number of advantages compared to discrete, separately mounted FETs. Their compact size makes them ideal for high-density applications, while their adjustable threshold voltage allows for greater precision when controlling currents. Furthermore, they consume less power than separate components and have longer lifetimes, making them an excellent choice for powering circuits over long periods of time.

The specific data is subject to PDF, and the above content is for reference