RS1KLW RVG Allicdata Electronics
Allicdata Part #:

RS1KLWRVGTR-ND

Manufacturer Part#:

RS1KLW RVG

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 800V 1A SOD123W
More Detail: Diode Standard 800V 1A Surface Mount SOD123W
DataSheet: RS1KLW RVG datasheetRS1KLW RVG Datasheet/PDF
Quantity: 3000
3000 +: $ 0.03804
6000 +: $ 0.03308
15000 +: $ 0.02812
30000 +: $ 0.02646
75000 +: $ 0.02481
Stock 3000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD123W
Operating Temperature - Junction: -55°C ~ 175°C
Description

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Diodes, also known as rectifiers, are semiconductor devices that allow current to flow in one unidirectional direction only. They are used in different electrical and electronic applications and are available as several types including single or multiple elements. The Rectifier RS1KLW is a single element, also called a single diode, that offers benefits over other diode types when there is a requirement for a low reverse recovery time (rrt). This application note describes the features and functions of this device.

The RS1KLW is a Schottky diode (SBD) made from silicon carbide (SiC) which offers low power dissipation and very fast inverse current switch off compared to silicon diodes. It has a maximum operational voltage of 1 kV and a maximum forward voltage of 7.5V, with a low reverse recovery time of 1 nanosecond. It also has a low forward voltage drop of 0.4V, which makes it suitable for high-power applications.

The RS1KLW has the following internal structure: two Schottky diodes in parallel, connected to a planar junction gate. The planar junction gate consists of a metal-oxide semiconductor field-effect transistor (MOSFET) and a planar junction diode. This internal structure allows the device to have a low on-state resistance and a low forward voltage drop, enabling efficient power switching at microwatt and low-voltage levels.

The RS1KLW is also a good choice for applications requiring low reverse recovery time. Since the internal structure of the device contains two Schottky diodes connected in parallel, the device can effectively switch from the forward conducting state to the reverse blocking state. The low reverse recovery time of 1 nanosecond ensures that the device can be used for high-frequency switching applications with minimal power dissipation. Additionally, the low forward voltage drop of the device enables high frequency operation and reduces switching losses.

The RS1KLW is a high temperature-resistant diode and is capable of operating up to a temperature of 175oC. The device also has an insulation voltage of 6kV which makes it suitable for use in circuits subject to large voltage spikes. These features make the RS1KLW an ideal choice for applications in automotive and aerospace applications.

The RS1KLW is an excellent choice for power circuit protection and power switching applications where high current is required but low voltage and reverse recovery time are important. Its fast on-state switching, high temperature resistance and excellent insulation ensure reliable performance for a wide range of automotive and aerospace applications. Additionally, the device\'s low forward voltage drop and low power dissipation make it ideal for efficient power switching.

The specific data is subject to PDF, and the above content is for reference

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