Allicdata Part #: | RS1KLWRVGTR-ND |
Manufacturer Part#: |
RS1KLW RVG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 800V 1A SOD123W |
More Detail: | Diode Standard 800V 1A Surface Mount SOD123W |
DataSheet: | RS1KLW RVG Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.03804 |
6000 +: | $ 0.03308 |
15000 +: | $ 0.02812 |
30000 +: | $ 0.02646 |
75000 +: | $ 0.02481 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 250ns |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123W |
Supplier Device Package: | SOD123W |
Operating Temperature - Junction: | -55°C ~ 175°C |
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Diodes, also known as rectifiers, are semiconductor devices that allow current to flow in one unidirectional direction only. They are used in different electrical and electronic applications and are available as several types including single or multiple elements. The Rectifier RS1KLW is a single element, also called a single diode, that offers benefits over other diode types when there is a requirement for a low reverse recovery time (rrt). This application note describes the features and functions of this device.
The RS1KLW is a Schottky diode (SBD) made from silicon carbide (SiC) which offers low power dissipation and very fast inverse current switch off compared to silicon diodes. It has a maximum operational voltage of 1 kV and a maximum forward voltage of 7.5V, with a low reverse recovery time of 1 nanosecond. It also has a low forward voltage drop of 0.4V, which makes it suitable for high-power applications.
The RS1KLW has the following internal structure: two Schottky diodes in parallel, connected to a planar junction gate. The planar junction gate consists of a metal-oxide semiconductor field-effect transistor (MOSFET) and a planar junction diode. This internal structure allows the device to have a low on-state resistance and a low forward voltage drop, enabling efficient power switching at microwatt and low-voltage levels.
The RS1KLW is also a good choice for applications requiring low reverse recovery time. Since the internal structure of the device contains two Schottky diodes connected in parallel, the device can effectively switch from the forward conducting state to the reverse blocking state. The low reverse recovery time of 1 nanosecond ensures that the device can be used for high-frequency switching applications with minimal power dissipation. Additionally, the low forward voltage drop of the device enables high frequency operation and reduces switching losses.
The RS1KLW is a high temperature-resistant diode and is capable of operating up to a temperature of 175oC. The device also has an insulation voltage of 6kV which makes it suitable for use in circuits subject to large voltage spikes. These features make the RS1KLW an ideal choice for applications in automotive and aerospace applications.
The RS1KLW is an excellent choice for power circuit protection and power switching applications where high current is required but low voltage and reverse recovery time are important. Its fast on-state switching, high temperature resistance and excellent insulation ensure reliable performance for a wide range of automotive and aerospace applications. Additionally, the device\'s low forward voltage drop and low power dissipation make it ideal for efficient power switching.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RS1KLW RVG | Taiwan Semic... | 0.04 $ | 3000 | DIODE GEN PURP 800V 1A SO... |
RS1KLS RVG | Taiwan Semic... | 0.04 $ | 24000 | DIODE GEN PURP 800V 1.2A ... |
RS1KL R3G | Taiwan Semic... | 0.05 $ | 9000 | DIODE GEN PURP 800V 800MA... |
RS1K R3G | Taiwan Semic... | 0.05 $ | 3600 | DIODE GEN PURP 800V 1A DO... |
RS1KLSHRVG | Taiwan Semic... | 0.05 $ | 6000 | DIODE GEN PURP 800V 1.2A ... |
RS1KLWHRVG | Taiwan Semic... | 0.05 $ | 3000 | DIODE GEN PURP 800V 1A SO... |
RS1K-E3/61T | Vishay Semic... | -- | 1800 | DIODE GEN PURP 800V 1A DO... |
RS1KB-13-F | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A SM... |
RS1K | ON Semicondu... | 0.05 $ | 30000 | DIODE GEN PURP 800V 1A SM... |
RS1KFP | ON Semicondu... | 0.06 $ | 1000 | DIODE GP 800V 1.2A SOD123... |
RS1KFA | ON Semicondu... | 0.06 $ | 1000 | DIODE GP 800V 800MA SOD12... |
RS1K-13-F | Diodes Incor... | -- | 80000 | DIODE GEN PURP 800V 1A SM... |
RS1KTR | SMC Diode So... | 0.01 $ | 1000 | DIODE GEN PURP 800V 1A SM... |
RS1KL RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1K M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RS1KL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KL MHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KL MQG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KL RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KL RUG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RS1KLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLHMQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLHRUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLHRVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KL RFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1K-M3/5AT | Vishay Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RS1K-M3/61T | Vishay Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RS1KHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RS1KLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KFS MXG | Taiwan Semic... | 0.04 $ | 1000 | DIODE, FAST, 1A, 800VDiod... |
RS1KFSHMXG | Taiwan Semic... | 0.04 $ | 1000 | DIODE, FAST, 1A, 800VDiod... |
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