
Allicdata Part #: | RS1KLHRQG-ND |
Manufacturer Part#: |
RS1KLHRQG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 800V 800MA SUBSMA |
More Detail: | Diode Standard 800V 800mA Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
20000 +: | $ 0.03262 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 800mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 800mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 500ns |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RS1KLHRQG is a Rectifier single diode with a small surface mount form factor. It is suitable for switching applications and also provides low forward voltage drop with low reverse leakage currents. The device is especially suitable for signal conditioning, high power and high-speed applications.
Application Field
RS1KLHRQG has a wide range of applications in various industries. As its performance characteristics are especially suitable for high power and high-speed applications, it is widely used in digital signal processing, audio and video transmission and other related electronic circuit design. It can also be used in applications such as electrochemical, power supplies, phase locked loops, digital circuits and lighting.
Due to its small form factor, it is also suitable for use in compact electronic devices, such as smartphones and laptops, which require improved performance and greater reliability.
Working Principle
RS1KLHRQG is a PN junction diode, which means that it is composed of two different types of semiconductor materials. The two semiconductor materials join together at the PN junction. When a voltage potential is applied to the diode, the voltage potential causes the electrons and holes in the two materials to move in opposite directions.
When the positive potential contacts the N-type material, the electrons are attracted to the positive terminal, while the P-type material attracts the holes. As the electrons and holes continue moving and meeting each other, they create a conductive layer, which can transmit current. This process is known as the forward bias of the diode.
When a negative potential is applied to the diode, the electrons and holes in the two materials move away from each other, creating a resistant layer. This process is known as the reverse bias of the diode. The resistance of the reverse bias will increase as the voltage potential increases.
The RS1KLHRQG is also capable of rectifying an AC signal. It can convert an alternating current into a unidirectional current. Rectification is usually done using diodes, by using the forward bias when the AC signal is positive, and the reverse bias when the AC signal is negative.
Conclusion
RS1KLHRQG is a single diode with a small surface mount form factor, which is especially suitable for high power and high-speed applications. It can be used in various industries, such as digital signal processing, power supplies, and electrochemical applications. The working principle of the diode is based on the PN junction, which enables it to be used for rectifying an AC signal, converting it into a unidirectional current.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RS1KL MQG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLHMQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RS1KLS RVG | Taiwan Semic... | 0.04 $ | 24000 | DIODE GEN PURP 800V 1.2A ... |
RS1KB-13-F | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A SM... |
RS1KLW RVG | Taiwan Semic... | 0.04 $ | 3000 | DIODE GEN PURP 800V 1A SO... |
RS1KLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1K | ON Semicondu... | 0.05 $ | 30000 | DIODE GEN PURP 800V 1A SM... |
RS1K R3G | Taiwan Semic... | 0.05 $ | 3600 | DIODE GEN PURP 800V 1A DO... |
RS1K-E3/61T | Vishay Semic... | -- | 1800 | DIODE GEN PURP 800V 1A DO... |
RS1KFS MWG | Taiwan Semic... | 0.05 $ | 7000 | DIODEDiode Standard 800V ... |
RS1KL RUG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KFSHMXG | Taiwan Semic... | 0.04 $ | 1000 | DIODE, FAST, 1A, 800VDiod... |
RS1KLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KL R3G | Taiwan Semic... | 0.05 $ | 9000 | DIODE GEN PURP 800V 800MA... |
RS1KL MHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RS1KL RFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KTR | SMC Diode So... | 0.01 $ | 1000 | DIODE GEN PURP 800V 1A SM... |
RS1KFS MXG | Taiwan Semic... | 0.04 $ | 1000 | DIODE, FAST, 1A, 800VDiod... |
RS1K-13-F | Diodes Incor... | -- | 80000 | DIODE GEN PURP 800V 1A SM... |
RS1K M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RS1K-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 1A DO... |
RS1KHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RS1KL RVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLHRUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KFA | ON Semicondu... | 0.06 $ | 1000 | DIODE GP 800V 800MA SOD12... |
RS1KFSHMWG | Taiwan Semic... | 0.05 $ | 7000 | DIODEDiode Standard 800V ... |
RS1KL RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLSHRVG | Taiwan Semic... | 0.05 $ | 6000 | DIODE GEN PURP 800V 1.2A ... |
RS1KLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1KLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 800MA... |
RS1K-M3/5AT | Vishay Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RS1KFP | ON Semicondu... | 0.06 $ | 1000 | DIODE GP 800V 1.2A SOD123... |
Diodes - General Purpose, Power, Switchi...

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

DIODE GEN PURPOSE DO-204ALDiode

DIODE GEN PURP 400V 1A DO41Diode Standar...

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

DIODE GEN PURP 400V 500MA D5ADiode Stand...
