
Allicdata Part #: | RS2K-E3/5BTGITR-ND |
Manufacturer Part#: |
RS2K-E3/5BT |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 1.5A DO214AA |
More Detail: | Diode Standard 800V 1.5A Surface Mount DO-214AA (S... |
DataSheet: | ![]() |
Quantity: | 1000 |
3200 +: | $ 0.10789 |
6400 +: | $ 0.10180 |
9600 +: | $ 0.09570 |
32000 +: | $ 0.09468 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 500ns |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 17pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | RS2K |
Description
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RS2K-E35BT Application Field and Working Principle
RS2K-E35BT are part of the family of rectifier single diodes for general purpose switching and signal applications. They are designed to handle surge currents up to 13 A and voltage to 2,000 V. This article provides an overview of the application field and working principle of RS2K-E35BT. Application Field RS2K-E35BT are used in many applications such as lighting, rectifier, freewheeling, power supply, convergence, EMI filtering, phase-shift, etc. Additionally, they are suitable for high frequency applications such as those used in flyback regulators and isolated DC/DC converters. Working Principle The basic working principle of RS2K-E35BT is simple. A diode is made of two terminals, the cathode and the anode. When a voltage is applied across the diode, current can be conducted from the cathode to the anode or from the anode to the cathode, depending on the direction of the applied voltage. This allows RS2K-E35BT to be used in a variety of applications as a way to switch current. Construction These rectifying single diodes are made of two leads, each connected to the anode and the cathode in a single package. They are constructed using a PN junction, which is formed by placing an n-type material (electrons) adjacent to a p-type material (holes). The voltage applied to the diode creates a potential difference or electric field that creates a depletion region around the junction. Operation In operation, RS2K-E35BT can be used as a rectifier when a voltage is applied across the diode. This voltage then creates an electric field causing current to flow in only one direction. The diode has a forward voltage drop which allows the current to be limited in a predetermined direction. The reverse breakdown voltage is a measure of the maximum voltage that can be applied in reverse direction before the diode completely breaks down and the current is no longer limited. Basic Characteristics RS2K-E35BT have a variety of characteristics which make them suitable for a variety of applications. The typical forward voltage drop of the diode is 0.7V and the maximum reverse breakdown voltage is 2KV. The diode can handle up to 13A in surge current, which makes it suitable for high frequency applications. In conclusion, RS2K-E35BT are ideal for applications that require a high voltage or current rating, such as lighting, rectifiers, and EMI filtering. Their characteristics, such as a low forward voltage drop and high reverse breakdown voltage, make them suitable for high frequency applications.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "RS2K" Included word is 18
Part Number | Manufacturer | Price | Quantity | Description |
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RS2KA M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2KA-13-F | Diodes Incor... | 0.15 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2K M4G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 2A DO... |
RS2KA-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2K-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2K-M3/52T | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2KHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2K-E3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2KAHR3G | Taiwan Semic... | 0.07 $ | 3600 | DIODE GEN PURP 800V 1.5A ... |
RS2K-M3/5BT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2KHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2KHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2K R5G | Taiwan Semic... | 0.08 $ | 2550 | DIODE GEN PURP 800V 2A DO... |
RS2K-E3/5BT | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2K-13-F | Diodes Incor... | -- | 12000 | DIODE GEN PURP 800V 1.5A ... |
RS2KAHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2KA R3G | Taiwan Semic... | 0.06 $ | 1800 | DIODE GEN PURP 800V 1.5A ... |
RS2KHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
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