
Allicdata Part #: | RS2KM4G-ND |
Manufacturer Part#: |
RS2K M4G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 800V 2A DO214AA |
More Detail: | Diode Standard 800V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ![]() |
Quantity: | 1000 |
6000 +: | $ 0.05286 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 500ns |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 50pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The RS2K M4G is a type of diode rectifier, a component typically used in power systems for regulating the flow of electricity. It is typically made of gallium arsenide and has a single internal layer structure. The RS2K M4G has a number of features that make it an ideal choice for applications in many different types of circuits.
The RS2K M4G is designed to be resistant to various electrical stresses, such as surges, overloads, and reverse current. This makes it ideal for protection of electronic components and circuits in applications where there may be a great variety of conditions. This kind of rectifier is also designed to have a low energy dissipation rate, meaning it is more efficient than many other types of devices and can thus be used in applications where energy savings is of utmost importance.
The RS2K M4G is also highly reliable in its performance. This is due to the fact that it has a single layer structure, meaning that all its components are highly integrated and there are no internal connections that can be affected by external factors. This in turn reduces the chance of failure, which is very important in applications where the component must be reliable under stressful conditions.
In addition, the RS2K M4G is also capable of producing high voltage despite its small size. This is made possible by the use of a Schottky diode, which is able to convert the electrical current into high voltage. This is immensely important in many applications, such as in power supplies. With this kind of diode, it is possible to produce a high output of power while still keeping the size of the component small.
The RS2K M4G also has high temperature resistance, and this is one of its most valued features. This is because it is designed to be able to operate under high temperatures, up to 150-160 degrees Celsius. This makes it highly suitable for applications in which it will be exposed to extremely high levels of heat, such as in automotive, industrial, and medical equipment.
The RS2K M4G is also quite versatile in its uses, as it can be employed in a variety of applications. It can be used in simple circuits, such as for switching and controlling of power, or it can be used in more complex systems, such as for the control of high voltage and current. This makes it useful for all kinds of power systems.
The RS2K M4G is a reliable and versatile component that is suitable for use in many different applications. It has a single layer structure, which gives it reliable performance, as well as resistance to electrical stresses. It also has a high temperature tolerance, meaning it can be used under conditions of high heat, making it suitable for use in automobile, industrial, and medical equipment. The component also has a high output and a small form factor, making it ideal for power supplies, switching and controlling applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RS2KA M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2KA-13-F | Diodes Incor... | 0.15 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2K M4G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 2A DO... |
RS2KA-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2K-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2K-M3/52T | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2KHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2K-E3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2KAHR3G | Taiwan Semic... | 0.07 $ | 3600 | DIODE GEN PURP 800V 1.5A ... |
RS2K-M3/5BT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2KHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2KHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2K R5G | Taiwan Semic... | 0.08 $ | 2550 | DIODE GEN PURP 800V 2A DO... |
RS2K-E3/5BT | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2K-13-F | Diodes Incor... | -- | 12000 | DIODE GEN PURP 800V 1.5A ... |
RS2KAHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
RS2KA R3G | Taiwan Semic... | 0.06 $ | 1800 | DIODE GEN PURP 800V 1.5A ... |
RS2KHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
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