RS3A-13-F Discrete Semiconductor Products |
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Allicdata Part #: | RS3A-FDITR-ND |
Manufacturer Part#: |
RS3A-13-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 50V 3A SMC |
More Detail: | Diode Standard 50V 3A Surface Mount SMC |
DataSheet: | RS3A-13-F Datasheet/PDF |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 50pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | SMC |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | RS3A |
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Introduction
RS3A-13-F is a single rectifier diode which made with an advanced planar technology, this device features low reverse leakage and fast switching speed. It is widely used in Automotive, EMI/EMC, Wind and Solar applications so that this device has secured a very important place in power electronics industry. The following study will focus on the application areas and working principle of the device.
Application Fields
RS3A-13-F, specially designed for Automotive, has the capability to sustain 1000V breakdown voltage and can withstand temperature between -55 to 150°C. It can prevent accidental reverse polarity connection and can endure the high current surges present in the power grid. It is perfectly apt for high-frequency AC ripple current and low-frequency rectification purposes, which protect the sensitive components from low-voltage and high-current surges. The use of the device has become a vital choice to reduce the number of components in the design and reduce the cost. As a single rectifier diode, it has been successfully utilized in EMI/EMC, Wind and Solar applications. In EMI/EMC applications, the device has been used to filter the high-frequency noise while allowing the low-frequency signals to pass through. When it comes to Wind and Solar applications, it has been used in Buck-Boost converter to boost up the voltage levels and drive the higher load currents.
Working Principle
RS3A-13-F is basically a unidirectional device with two terminals, Anode and Cathode. When the voltage is applied across the two terminals, electrons will flow from Anode to Cathode. This result in an electric current from the Cathode to Anode, referred to as Forward Bias configuration. It will act like a closed switch and hence most of the voltage will drop across diode. It also acts as a ‘parasitic capacitor’ and it will send back some of the spurious signals that can pass through the diode. As a result, it reduces the sine wave distortion and Harmonisation.
In case of Reverse Bias configuration, when the voltage is greater at the Cathode and lesser at the Anode, the flow of electrons is going to restricted to a minimum value. Hence the voltage drop across the diode will be negligible and current will be flowing from Anode to Cathode is called Reverse Bias. This device has no capacitive effects in Reverse Bias.
Conclusion
RS3A-13-F is a reliable single rectifier diode which has numerous application areas. Its specially designed to tolerate the current surge in Automotive as well as suitable for EMI/EMC, Wind and Solar applications. The device has two terminals, Anode and Cathode, whose behavior is decided upon which electric current (Forward or Reverse) is flowing through it. The device has the capability to filter the high-frequency noise and activate the low-frequency signals. With the ability to withstand up to 1000V and temperature range between -55 to 150°C, RS3A-13-F is one of the reliable and most cost-effective single rectifier diode available in the market.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RS3AB-13-F | Diodes Incor... | -- | 9000 | DIODE GEN PURP 50V 3A SMB... |
RS3A-13-F | Diodes Incor... | -- | 6000 | DIODE GEN PURP 50V 3A SMC... |
RS3AHE3_A/I | Vishay Semic... | 0.17 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A-E3/9AT | Vishay Semic... | 0.17 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3AHE3_A/H | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A M6G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A V6G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A R7G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3AHM6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A V7G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3AHR7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A-M3/9AT | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A-M3/57T | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3AHE3/9AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3AHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A SMC... |
RS3AB-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 50V 3A SMB... |
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