Allicdata Part #: | RS3AHE3_A/I-ND |
Manufacturer Part#: |
RS3AHE3_A/I |
Price: | $ 0.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 3A DO214AB |
More Detail: | Diode Standard 50V 3A Surface Mount DO-214AB (SMC) |
DataSheet: | RS3AHE3_A/I Datasheet/PDF |
Quantity: | 1000 |
3500 +: | $ 0.14820 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 2.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 44pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | RS3A |
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.RS3AHE3_A/I Application Field and Working Principle
RS3AHE3_A/I refers to a type of single-phase silicon rectifier diode. As one of the most important electronic components, RS3AHE3_A/I can be used to convert alternating current (AC) electric energy into direct current (DC) electric energy, thereby playing a vital role in electric and electronic systems.
In terms of its application fields, the RS3AHE3_A/I diode can be used in various kinds of power applications. It can be used to provide a stable current in motor control systems to ensure a smooth and efficient operation. The diode can also serve as an effective switch in AC-DC power supplies and battery chargers. It is also perfect for use in circuit protection and filtering, as it can help block any sudden surge in power. Being an economical, reliable and convenient diode, the RS3AHE3_A/I is widely used in various power applications.
To understand the working principle of RS3AHE3_A/I, we need to first understand the principle of its construction. Its PN junction is composed of two doped semiconductors, P-type and N-type. The P-type semiconductor has a large number of holes, while the N-type semiconductor has a large number of electrons. When an electric current is applied to the two semiconductors, the two semiconductors are reverse-biased and a PN junction is formed. Thus the electric current cannot pass through the PN junction.
Then, when the external electric current is applied to the PN junction in a forward direction, the potential barrier is eliminated and current can then pass through the junction. This is known as the forward biased condition. In this state, the diode acts as a conductor that allows the current to flow. This is also known as rectification, where AC is converted to DC.
Finally, when the external electric current is applied to the PN junction in a reverse direction, the potential barrier is again established and no current can flow in the junction. This is the state of reverse biased condition. In this state, the diode acts as an insulator that does not allow the current to pass. This is also known as blocking, where DC is blocked from passing through the junction.
These are some of the basic concepts that need to be understood in order to better comprehend the application field and working principle of RS3AHE3_A/I silicon rectifier diodes. Although they have many uses, they are most commonly used in power applications, where they help to convert alternating currents into direct currents, and to block and filter sudden surges in power. This makes them indispensable in any kind of modern electronic and power system.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RS3AB-13-F | Diodes Incor... | -- | 9000 | DIODE GEN PURP 50V 3A SMB... |
RS3A-13-F | Diodes Incor... | -- | 6000 | DIODE GEN PURP 50V 3A SMC... |
RS3AHE3_A/I | Vishay Semic... | 0.17 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A-E3/9AT | Vishay Semic... | 0.17 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3AHE3_A/H | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A M6G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A V6G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A R7G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
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RS3A V7G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
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RS3A-M3/9AT | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A-M3/57T | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3AHE3/9AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3AHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
RS3A-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A SMC... |
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