RS3G-13-F Datasheet/PDFRS3G-13-F is a rectifier diode, consists of two semiconductor silicon crystals that join together. One of the half is N-typematerial, which contain more electrons, and the other P-type material contains fewer electrons. By joining the two elements together, an electrical switch is created.
The working principle of RS3G-13-F is that its electrodes are connected to two alternate sides of a P-N junction which form a diode circuit. When a positive voltage is applied to one of the poles,thiscreates a diffusion current that flows from the N-surface to the P-surface. Because of the diffusion current, the depletion region forms, which is the region where no electrons can pass through. As a result, the diode blocks electrical current flow in the opposite direction, and only allows it to pass through in the forward direction.
RS3G-13-F is suitable for high frequency rectification and relay/transistor/motor drive applications as well as protection and voltage stabilizing circuit. It can be used in voltage regulation, peak voltage clamping, smoothing power supplies, and rectifying AC to DC.
Moreover, its fast recovery time is less than 20ns, the average current range is from 1A to 5A and the break through voltage range is from 15V to 30V, when the polarity is reversed it can withstand 30V for 10ms. It can also be used for on-off controls, such as solenoid valves, relays, and temperature controllers.
So in conclusion, RS3G-13-F is a rectifier diode used for high frequency rectification and other applications by rectifying AC to DC with a fast recovery time. Its electrodes is connected to two alternate sides of a P-N junction, forming a diode circuit. When a positive voltage is applied, it creates a diffusion current which blocks current flow in the opposite direction. It is suitable for many different applications.