Allicdata Part #: | RS3G-E3/57TGITR-ND |
Manufacturer Part#: |
RS3G-E3/57T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 3A DO214AB |
More Detail: | Diode Standard 400V 3A Surface Mount DO-214AB (SMC... |
DataSheet: | RS3G-E3/57T Datasheet/PDF |
Quantity: | 1700 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 2.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | 44pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | RS3G |
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RS3G-E3/57T is a device that is classified as diodes, specifically rectifiers. Designed to rectify AC current to DC current, the RS3G-E3/57T is a single diode device that is widely available and used extensively in both industrial and consumer applications. We will take a look at the RS3G-E3/57T application field and its working principle in this article.
RS3G-E3/57T is mainly used for smoothing and power supply circuits, and it can be used as rectifying element for motor control systems. The device is also used for switching applications such as motor control systems, HID control, high-speed logic control, semiconductor drive circuits, high-speed communication circuit, etc.
The RS3G-E3/57T is a diode operating on a forward current circuit. It is made up of two layers of semi-conductive material. The first layer is a p-type material, while the second is a n-type material. The diodes two layers are connected in an anode and cathode configuration. The anode is the positive layer or cathode side, while the cathode is the negative or anode side. The device operates with the flow of current. When current flows through the diode in the forward direction, the current is considered to be conducting in the forward direction. The current will flow freely between the two layers and through the device.
However, when a reverse current is applied, the diode is considered to be reversed biased, and current will not flow through the device. This creates what is known as a non-conducting current, meaning that no current will flow through the device when a reverse current is applied. This is a crucial factor when using RS3G-E3/57T in rectifying applications, as this will stop the reverse current from flowing and allow the forward current to be rectified.
The working principle of the RS3G-E3/57T is very simple. It consists of two layers of semi-conductive material as already mentioned, one being a p-type and the other being a n-type material. The current flows through the device in a specific direction, which is dictated by the anode and cathode. When the current is applied in the forward direction, it flows freely between the two layers of semi-conductive material, which allows the current to be rectified to a DC current, depending on the applied voltage.
In the reverse bias configuration, the two layers of semi-conductive material are connected but will not allow for any current to flow, as the current does not have a clear path through the device. This scenario creates a non-conducting current, which prevents the reverse current from flowing through the device and allows for the forward current to flow freely.
Overall, it is evident that the RS3G-E3/57T is an incredibly useful device in rectifying applications. It provides efficient operation and reliable performance, allowing for accurate and safe rectification of AC current. In addition, its simple working principle makes the RS3G-E3/57T easy to use and understand.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RS3GB-13-F | Diodes Incor... | -- | 24000 | DIODE GEN PURP 400V 3A SM... |
RS3G-E3/57T | Vishay Semic... | -- | 1700 | DIODE GEN PURP 400V 3A DO... |
RS3G-13-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 400V 3A SM... |
RS3GHE3_A/I | Vishay Semic... | 0.17 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
RS3G-E3/9AT | Vishay Semic... | 0.17 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
RS3GHE3_A/H | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
RS3G M6G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
RS3G V6G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
RS3G R7G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
RS3GHM6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
RS3G V7G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
RS3GHR7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
RS3G-M3/9AT | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
RS3G-M3/57T | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
RS3GHE3/9AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
RS3GHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
RS3GB-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A SM... |
RS3G-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A SM... |
RS3G/7T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
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