| Allicdata Part #: | RSFALRHG-ND |
| Manufacturer Part#: |
RSFAL RHG |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE GEN PURP 50V 500MA SUB SMA |
| More Detail: | Diode Standard 50V 500mA Surface Mount Sub SMA |
| DataSheet: | RSFAL RHG Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.03093 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 50V |
| Current - Average Rectified (Io): | 500mA |
| Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 500mA |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 150ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 50V |
| Capacitance @ Vr, F: | 4pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-219AB |
| Supplier Device Package: | Sub SMA |
| Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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Radial Junction Field-Effect Transistors (RSFAL-RHG) have been widely used in the electronics industry due to their high voltage and current handling capabilities. They are often referred to as surface-mount transistor chips and are typically used in applications that require low-power, high-speed switching.RSFAL-RHG transistors consist of a single p-type semiconductor layer sandwiched between two n-type layers. The p-type layer acts as an isolator or “gate”, while the n-type layers act as source and drain contacts. An applied electrical field at the gate causes the junction to open or close depending on the voltage applied across the source and drain contacts. The transistor can thus be used as a digital switch in high-speed applications.The switching speed of RSFAL-RHG transistors is typically in the range of 250 to 600V, with typical rise and fall times of about 0.1 to 0.2 nanoseconds. This makes them ideal for applications where quick response is required. The current handling capability of RSFAL-RHG transistors can be up to several amperes, making them suitable for power control applications.The high speed and low power characteristics of RSFAL-RHG transistors make them suitable for a wide range of applications, including power supplies, motor control systems, telecommunications systems, and integrated circuits. In these applications, the switch can perform many functions, such as switching loads, controlling system parameters, and monitoring system performance. Additionally, the high voltage capability of the transistor makes it suitable for interfacing between different systems or between two circuits.The basic working principle of the RSFAL-RHG transistor is the same as that of other transistors, namely the phenomenon of current flow through the device when the gate voltage is properly applied. When a positive voltage is applied to the gate, current flows through the device. Conversely, when the voltage is reversed, current does not flow. Due to the high input impedance of the gate, the current is usually very low when the transistor is off.Radial Junction Field-Effect transistors (RSFAL-RHG) are an efficient and versatile type of transistor. The chips have low power consumption and high speed, which makes them ideal for high-speed switching applications. Moreover, the device can handle large currents, making it suitable for use in power control applications. RSFAL-RHG transistors are therefore widely used in many different types of applications.The specific data is subject to PDF, and the above content is for reference
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RSFAL RHG Datasheet/PDF