RSFALHRVG Allicdata Electronics
Allicdata Part #:

RSFALHRVG-ND

Manufacturer Part#:

RSFALHRVG

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 50V 500MA SUB SMA
More Detail: Diode Standard 50V 500mA Surface Mount Sub SMA
DataSheet: RSFALHRVG datasheetRSFALHRVG Datasheet/PDF
Quantity: 1000
15000 +: $ 0.03175
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes - Rectifiers - Single

RSFALHRVG (Reverse and Forward Attenuation Limited High Voltage Rectifier with Gaseous Ion Plasma) is a type of diode rectifier device that is used to condition and/or scale high voltage pulses found in applications such as high voltage power transmission, industrial control circuits, high voltage H-bridges, ultra-fast electrostatic discharge protection and other applications. Its most distinctive feature is the ability to convert high voltage pulses with a wide range of amplitudes into low voltage pulses with an attenuated amplitude suitable for further conditioning, or provide a start-up current for drive intensive loads. Another major feature of RSFALHRVG is its high voltage tolerance and short recovery time.

Operation Principle

RSFALHRVG devices operate based on a principle called “Plasma-Gated Ion Switching”. Essentially, a vacuum chamber is filled with a gas containing a small number of electrically charged particles, known as ions. When a high-voltage pulse is applied to two terminals of the device, an ion plasma forms around the positive terminal, while a negative ion plasma forms around the negative terminal. This creates an electric field across the terminals, allowing current to flow between them. Although the impedance of the device is very low in this state, the current will also be confined by the electric field, so as to prevent excessive current leakage. When the voltage drops below that of the Reverse Breakdown Voltage (RBDV), the ion plasma will dissipate and the electric field will no longer be strong enough to block current flow. As a result, the device will enter a reverse blocking mode, and revert to a high impedance state. Additionally, the PED synthesis diode can also be used to provide significant current attenuation, from the forward direction. With this mechanism, the device will convert high voltage pulses with wide amplitude into attenuated low voltage pulses that can be further conditioned for use in various applications.

Advantages

Due to its unique set of characteristics and operating principles, RSFALHRVG offers many advantages compared to traditional diode rectifiers.

High Voltage Tolerance

RSFALHR VG devices are highly resistant to high voltages up to 20KV, making them suitable for use in high voltage applications.

Short Recovery Time

The reverse blocking mode of operation ensures a very short recovery time, typically in the range of a few microseconds to a few milliseconds, making it suitable for applications requiring high speed switching.

High Efficiency

The short recovery time of the device also translates to higher efficiency, since the device does not need to dissipate excessive amounts of power during reverse blocking.

Wide Operating Frequency Range

RSFALHRVG devices can operate at frequency ranges up to 100MHz, providing good performance in high-frequency switching and conditioning circuits.

Low Current Leakage

The electric field generated within the devices helps to limit current leakage, which is especially important in the case of high-voltage circuits.

Applications

RSFALHRVG devices are typically used in a wide range of applications, including:

  • High voltage power transmission
  • Industrial control circuits
  • High voltage H-bridges
  • Ultra-fast electrostatic discharge protection
  • Ultra-high frequency modulation and demodulation circuits
  • RF signal amplification
  • High-voltage isolation circuits

Conclusion

RSFALHRVG devices are a very versatile type of diode rectifier, with a wide range of advantages over traditional rectifiers. Their unique operation principles and features make them ideal for use in a wide range of high-voltage and high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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