| Allicdata Part #: | RSFBLHMTG-ND |
| Manufacturer Part#: |
RSFBLHMTG |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE GEN PURP 100V 500MA SUBSMA |
| More Detail: | Diode Standard 100V 500mA Surface Mount Sub SMA |
| DataSheet: | RSFBLHMTG Datasheet/PDF |
| Quantity: | 1000 |
| 15000 +: | $ 0.03175 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 500mA |
| Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 500mA |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 150ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 100V |
| Capacitance @ Vr, F: | 4pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-219AB |
| Supplier Device Package: | Sub SMA |
| Operating Temperature - Junction: | -55°C ~ 150°C |
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For applications that require higher operating temperatures and higher frequencies, many applications are turning towards silicon carbide (SiC). SiC is well-suited for moderate to high current rectification, like that required for an RSFBLHMTG. A SiC diode will handle twice the current or voltage of a conventional diode with the same package size.
The RSFBLHMTG is a single rectifier SiC Schottky diode, offering the benefits of high blocking voltage capability and operating temperatures up to 175°C. Unlike standard diodes, Schottky diodes are made up of a metal-semiconductor junction instead of a p-n junction. This makes them faster and generates less voltage drop. This, in turn, results in increased efficiency and power savings as less power is lost in the form of heat.
The RSFBLHMTG offers reverse voltage of 400V, with Forward Current rating of 20A. It is a single-phase and dual-gate common-cathode silicon carbide rectifier, with an average on resistance of 0.43Ohms, making it suitable for high frequency, low voltage applications. The typical Capacitance between Drain and Source is 20pF and the Maximum Reverse Recover Time is 5.4nS.
The RSFBLHMTG can be used in a variety of applications, but is particularly useful in power rectification and voltage regulation, due to its high temperature performance, high current capability, fast switching time, and low forward voltage drop. It is also suitable for use in a wide range of switching power supplies, battery charging systems, and RF heating. The versatility of the RSFBLHMTG makes it an ideal solution for a variety of applications.
The Schottky diode has a variety of advantages compared to other types of rectifiers, including faster switching speeds, lower forward voltage drop, and higher temperatures. The fast switching speed means it can respond quickly to changes in load current. The low forward voltage drop improves efficiency and reduces power dissipation. Last but not least, the higher temperature rating improves reliability and makes the diode suitable for high-power applications.
In summary, the RSFBLHMTG is a single rectifier silicon carbide Schottky diode offering many advantages including higher operating temperatures and frequencies. Its fast switching speed and low forward voltage drop make it suitable for a variety of applications, including power rectification and voltage regulation, switching power supplies, battery charging systems, and RF heating. It is an ideal solution for applications that require higher operating temperatures and higher frequencies.
The specific data is subject to PDF, and the above content is for reference
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RSFBLHMTG Datasheet/PDF