| Allicdata Part #: | RSFBLHRFG-ND |
| Manufacturer Part#: |
RSFBLHRFG |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE GEN PURP 100V 500MA SUBSMA |
| More Detail: | Diode Standard 100V 500mA Surface Mount Sub SMA |
| DataSheet: | RSFBLHRFG Datasheet/PDF |
| Quantity: | 1000 |
| 9000 +: | $ 0.03572 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 500mA |
| Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 500mA |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 150ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 100V |
| Capacitance @ Vr, F: | 4pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-219AB |
| Supplier Device Package: | Sub SMA |
| Operating Temperature - Junction: | -55°C ~ 150°C |
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Rectifying Schottky Field-Effect Transistors (RSFBLHRFG) are a new type of power devices that are gaining popularity in applications involving high efficiency power switching. They provide excellent switching characteristics and are capable of handling current ratings of up to 25V and peak source and drain current of up to 360A. These devices are noted for their extremely low on-state resistance(RDS(on)) and fast switching speed.
RSFBLHRFGs have a unique operating principle, which exploits the intrinsic Schottky barrier at the semiconductor interface to directly rectify the voltage applied to the device. This rectification reduces the amount of time the device is in the on state, thus increasing efficiency. In addition, the Schottky barrier prevents the device from becoming over-saturated, which would otherwise reduce switching speed.
RSFBLHRFGs are used in a variety of applications, including motor control, switching power supplies, and battery charging. Motor control applications include electric vehicle and hybrid electric vehicle propulsion systems, boilers, pumps, and industrial motors. Similarly, switching power supplies are used in appliances, telecommunication and data processing equipment, and consumer electronics. They are also used in battery charging systems, such as in smartphones and laptops, helping to maximize efficiency and reduce standby power consumption.
The fabrication process of RSFBLHRFGs is similar to other high power devices. It starts with n-type silicon and then dopants are added to form the active paths. Finally, a Schottky gate metal is deposited between the source and the drain, providing a small voltage rectification that aids in the switch’s low on-state resistance.
The performance of RSFBLHRFGs is affected by the design and manufacturing processes used to fabricate them. To ensure they are manufactured with the highest possible performance, devices are tested and rated in terms of RDS(on), diode voltage drop, current drive capability, and switching speed.
In summary, RSFBLHRFGs are becoming popular in applications that require high efficiency power switching due to their excellent switching characteristics, low on-state resistance, and fast switching speed. Their unique operating principle and fabrication process make them suitable for a wide range of applications. Furthermore, they are highly rated in terms of RDS (on), diode voltage drop, current drive capability, and switching speed.
The specific data is subject to PDF, and the above content is for reference
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RSFBLHRFG Datasheet/PDF