Allicdata Part #: | RSFGLRTG-ND |
Manufacturer Part#: |
RSFGL RTG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 400V 500MA SUBSMA |
More Detail: | Diode Standard 400V 500mA Surface Mount Sub SMA |
DataSheet: | RSFGL RTG Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.03175 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 500mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 500mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 4pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RSFGL RTG (Resonant Freely-Guided Laser-Triggered Gas-Discharge) is a new type of accelerator technology that utilizes a special laser-triggered gas-discharge. It is based on a single-stage, linear accelerator architecture and is characterized by high efficiency and low energy consumption compared to the conventional accelerator systems with many stages. The operating principle of RSFGL consists of four key components: a discrete laser-triggered gas-discharge, a high-voltage driving field, a controllable RF circuit, and a control system.
The core of the RSFGL system is a discrete laser-triggered gas-discharge. When the laser beam is fired at the gas-discharge target, a localized electric field is generated within the gas-discharge region, resulting in a focused electro-magnetic field which accelerates electrons and ions. This accelerated electrons serve as the driving particles for the RSFGL RTG. The electrons, when properly set up and directed, cause the generation of a high-voltage driving field.
The high-voltage driving field is formed by a combination of the electro-magnetic field created by the laser beam and the ions generated by the gas-discharge interaction. This field serves to accelerate electrons thought the gas-discharge region, resulting in a beam of accelerated electrons traveling along the channel inside the RTG. The controllable RF circuit is responsible for controlling the frequency of the RF signal created by the driving field and the resulting motion of the electrons. It is also used to create the electric field gradient needed for the acceleration of the electrons.
Finally, the control system is used to monitor the operation of the accelerator and to adjust the parameters needed for optimal operation. It can be used to set the frequency and intensity of the laser beam, adjust the voltage of the driving field, control the flow of the electrons, and adjust the structure of the RTG for optimal results. The control system also contains safety protocols and can be used to monitor the status of the system and alert the operator in case of an abnormal situation.
RSFGL RTG technology has a variety of potential applications, including medical imaging, particle accelerators, and other advanced technologies. Its low energy consumption and efficient operation make it an attractive technology for many scientific and industrial applications. In addition, its lack of complex staging and components makes it more cost-effective than other accelerator technologies.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RSFGL R3G | Taiwan Semic... | 0.06 $ | 7200 | DIODE GEN PURP 400V 500MA... |
RSFGL RVG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGL RHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGL MHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGL MQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGL MTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGL RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGL RTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGLHMQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGLHRUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGLHRVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGL M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGL RFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
RSFGL RUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 500MA... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...