Allicdata Part #: | RSFJLHMHG-ND |
Manufacturer Part#: |
RSFJLHMHG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 500MA SUBSMA |
More Detail: | Diode Standard 600V 500mA Surface Mount Sub SMA |
DataSheet: | RSFJLHMHG Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03387 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 500mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 500mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 250ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 4pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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When it comes to electrical circuits, there\'s often the need to direct current (DC) in one direction while blocking the opposite. To do this, engineers use a diode - a circuit element that is able to control the flow of current by a process called rectification. In the industry, one of the most popular devices is the RSFJLHMHG.
The RSFJLHMHG (Recessed-gate Standard Field-effect Junction Light Heavy Metal Hold-Gate) is an avalanche-type rectifier diode that is designed for a wide range of applications. With its large junction capacitance and low reverse current leakage, it is most commonly used in high-power rectification, reverse bias protection, and flywheel switching applications. It is available in a wide variety of case styles, including through-hole, surface-mount, and encapsulated versions.
An RSFJLHMHG is constructed of two layers of semiconductor material, one p-type and one n-type, which are placed in close proximity and connected in a standard orientation. The junction is surrounded by a recess in the n-type layer, and a field-effect barrier is placed between the two layers to control the flow of current. The contacts, also known as gates, form the electrical connection and allow the structure to function as a rectifier.
The working principle of the RSFJLHMHG is based on the principle of rectification. This process involves allowing just the direct (DC) current to flow in one direction, while blocking the current in the opposite direction. When a forward bias is applied to the diode, electrons in the n-type layer are displaced, allowing the majority carriers (holes) to move freely in the p-type layer. When the voltage is reversed, the opposite process occurs and the holes are repelled back to their original position, effectively blocking the current flow.
Due to its unique design, this diode provides a number of advantages over other diodes. Since it is an avalanche-type diode, it offers superior thermal performance and superior transient behavior. It is also very stable in the presence of noise and it is suitable for high frequency switching applications. Most notably, it is capable of higher current handling than standard diodes, allowing it to be used in larger power applications. The wide range of case styles also makes it very versatile and allows for a variety of mounting options.
In conclusion, the RSFJLHMHG is an ideal choice for a variety of applications. It is a very reliable device that offers superior thermal performance, superior transient behavior, and superior high frequency switching capabilities. Its large junction capacitance and low reverse current leakage make it suitable for high power rectification and reverse bias protection applications. And its wide range of case styles allow it to be used in a variety of mounting designs. All these features make the RSFJLHMHG a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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