RSFJLHMQG Allicdata Electronics
Allicdata Part #:

RSFJLHMQG-ND

Manufacturer Part#:

RSFJLHMQG

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 600V 500MA SUBSMA
More Detail: Diode Standard 600V 500mA Surface Mount Sub SMA
DataSheet: RSFJLHMQG datasheetRSFJLHMQG Datasheet/PDF
Quantity: 1000
20000 +: $ 0.03387
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes - Rectifiers - Single

RSFJLHMQG application field and working principle

RSFJLHMQG are a type of single rectifier diode, often referred to as “rapid recovery” or “soft recovery” diodes. This type of diodes are widely used in high-speed applications due to their low forward voltage drop, high switching speed and low leakage current, even with high input voltages. The application fields for RSFJLHMQG diodes include logic level power supplies, automotive power systems, switched power supplies, pulse transformers and high-power audio amplifiers.

Like all other diodes, RSFJLHMQG diodes allow current to flow in one direction only, but not in the opposite direction. This is due to their composition, which consists of two different types of semiconductor material. When the semiconductor material is exposed to an electric current, it creates a field of electrons near the junction, which constitutes the diode\'s internal resistance. This resistance is very low when the current is applied in the forward direction, allowing current to flow from one side of the diode to the other, but it is much higher when the current is applied in the reverse direction, effectively blocking the current.

RSFJLHMQG diodes are different from conventional diodes in that they exhibit a much faster recovery time when switching from current blockage to current flow. This is due to their unique structure, which consists of two interdigitated layers of doped Silicon. This structure also gives them their high switching speed and low forward voltage drop.

A RSFJLHMQG diode can be used in a wide range of circuits, including high-speed switching, pulse power, high-power audio amplifiers, logic level power supplies and automotive power systems. It provides the same basic features as other rectifier diodes, including low forward voltage drop, high switching speed and low leakage current, while also offering a faster recovery time after switching.

In summary, RSFJLHMQG are a type of single rectifier diode, suitable for a wide range of applications due to their low forward voltage drop, high switching speed and low leakage current. Their unique structure allows for a faster recovery time after switching, making them an ideal choice for high-speed applications.

The specific data is subject to PDF, and the above content is for reference

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