RSFKL M2G Allicdata Electronics
Allicdata Part #:

RSFKLM2G-ND

Manufacturer Part#:

RSFKL M2G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 800V 500MA SUBSMA
More Detail: Diode Standard 800V 500mA Surface Mount Sub SMA
DataSheet: RSFKL M2G datasheetRSFKL M2G Datasheet/PDF
Quantity: 1000
7500 +: $ 0.03876
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

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A rectifier is an electronic device used to convert alternating current (AC) to direct current (DC). They are commonly used in all sorts of electronic devices, from computers and televisions to smart phones and other digital music players. One of the most common types of rectifier is the diode. Diodes are a type of semiconductor that allow electricity to flow in one direction only, which makes them ideal for converting AC to DC.

The RSFKL M2G is a silicon rectifier diode designed to provide fast switching and low leakage. It is a useful component when used in high-frequency, high-voltage rectification applications. It has a reverse voltage rating of 535V and a forward current rating of 1A. This type of diode is highly reliable and efficient, making it an ideal choice for a wide range of applications.

The RSFKL M2G operates as a two-termperature junction device. This means that it has two layers, a P-type layer and an N-type layer, which have a different bandgap energy at the junction. When a forward bias voltage is applied across the junction, the P-type electrons in the P-type layer become excited and jump into the N-type layer, creating a barrier of positive electrons across the junction.

The high reverse breakdown voltage of the RSFKL M2G is due to its unique construction. It features a guard-ring structure which helps to reduce the facturing along the edges of the diode’s junction. This reduces the chances of an avalanching along the junction and thus helps to increase the reverse breakdown voltage of the device. This makes it an ideal choice for use in applications requiring high reverse breakdown voltage.

The RSFKL M2G is a versatile workhorse device suitable for a wide range of applications. It is commonly used in AC-DC power supplies, battery chargers, UPS systems and many other power rectifier applications where a high surge current is required.

In conclusion, the RSFKL M2G rectifier diode is an efficient and reliable device for use in a variety of applications. It features a low leakage and high reverse breakdown voltage and can be used in a wide range of power rectifier applications requiring a high surge current. The device is versatile and can be customized to meet the specific requirements of a particular application. As such, it is a great choice for anyone looking for a reliable, cost-effective solution for their power rectification needs.

The specific data is subject to PDF, and the above content is for reference

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