RU 1A Allicdata Electronics
Allicdata Part #:

RU1A-ND

Manufacturer Part#:

RU 1A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: DIODE GEN PURP 600V 250MA AXIAL
More Detail: Diode Standard 600V 250mA Through Hole
DataSheet: RU 1A datasheetRU 1A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 250mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: --
Operating Temperature - Junction: -40°C ~ 150°C
Description

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Single-phase rectifier diodes are among the most commonly used electrical components. Typically, they are used in applications such as power supplies and motors. In this article, we’ll cover the basic operation and construction of the RU 1A rectifier diode and explain how it is used in various applications.

Applications

RU 1A rectifier diodes are commonly used in power supplies, motor control circuits, and 24-volt systems. Their high current-carrying capacity and low voltage drop make them ideal for applications requiring more current than a standard Diode-Rectifier-Bridge can provide. This makes RU 1A rectifier diodes the ideal choice for applications that require more reliable and efficient conversions of AC to DC power.

RU 1A diodes are often used in systems whose loads require low-voltage, low-current power. In these applications, the diodes can be used to convert AC to DC, down-regulate voltage, and reduce ripple current. They are also commonly used in motor control circuits to provide rectified current, allowing precise control of torque and speed.

Construction

RU 1A rectifier diodes are constructed using a wafer process, which allows a precise control of their physical size and electrical properties. The diodes are formed using epitaxial silicon with an aluminium semiconductor diffusion layer. This combination of materials allows the RU 1A to provide excellent surge current capability and low forward voltage drop. The diode also has a temperature coefficient of -2mV/C, which ensures a reliable operation in various temperature extremes.

Working Principle

The working principle of the RU 1A rectifier diode is based on the PN junction semiconductor. When a voltage is applied across the PN junction, electrons from the N-type semiconductor diffuse across the junction and recombine with holes in the P-type semiconductor. This creates an electric current, which allows the diode to act as a rectifier, converting AC to DC.

The RU 1A rectifier diode has a low forward voltage drop. This means that, when a voltage is applied across the PN junction, only a small amount of voltage is lost. This allows the diode to effectively convert AC to DC with minimal loss of power. The diode also has a high surge current capability, which allows it to handle brief transient loads.

Conclusion

In summary, RU 1A rectifier diodes are an ideal choice for applications requiring a reliable and efficient conversion of AC to DC power. They offer a high current-carrying capacity, minimal voltage drop, and high surge current capability. The RU 1A rectifier diode is typically used in power supplies, motor control circuits, and low-voltage systems.

The specific data is subject to PDF, and the above content is for reference

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