RU1J002YNTCL Discrete Semiconductor Products |
|
Allicdata Part #: | RU1J002YNTCLTR-ND |
Manufacturer Part#: |
RU1J002YNTCL |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 50V 0.2A UMT3F |
More Detail: | N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | RU1J002YNTCL Datasheet/PDF |
Quantity: | 51000 |
3000 +: | $ 0.02533 |
Vgs(th) (Max) @ Id: | 800mV @ 1mA |
Package / Case: | SC-85 |
Supplier Device Package: | UMT3F |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 26pF @ 10V |
Vgs (Max): | ±8V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.2 Ohm @ 200mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 0.9V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RU1J002YNTCL is a type of transistor manufactured by ON Semiconductor, a global leader in powering a connected world. It is a single flat package (SOP) transistor, which offers a low on-resistance and a fast switching speed compared to other transistors. This makes it an ideal choice for high-speed circuit designs, and it is also used in a number of consumer electronics applications.
A transistor can be broadly classified as either a bipolar transistor (BJT) or a field effect transistor (FET). RU1J002YNTCL is a FET, specifically an N-Channel Metal Oxide Semiconductor FET (MOSFET). A MOSFET works on the principle of electrostatic control and is generally driven by a voltage instead of current. It works by having a conductive channel formed between two electrodes (source and drain) while another electrode (gate) imposes an electric field to control the channel. When the gate voltage is applied, the channel forms and electrons are allowed to flow through the channel and onto the drain, thus turning the transistor on.
RU1J002YNTCL can be used in a variety of applications given that it possesses a relatively low on-resistance which allows it to switch and transfer more current with minimum losses compared to other transistors. It is typically used as a switch or power amplifier in many consumer electronics products such as cell phones, televisions, stereo systems and computers.
RU1J002YNTCL is a popular choice for applications that require both a low on-resistance, a low gate drive voltage, and a fast switching speeds. The device is perfect for high-speed circuit designs as it combines high-speed performance with lower on-resistance and low gate drive voltage. It is also ideal for high side drive applications due to its low gate drive voltage requirement and fast turn-on time.
Given its low on-resistance, fast switching speed and low gate drive voltage requirements, RU1J002YNTCL is an ideal choice for many applications, including consumer electronics such as cell phones, televisions, and audio systems. It is also perfect for high-speed circuit designs and is widely used in various high side drive applications. Ultimately, it is one of the most popular transistor choices in the market today, thanks to its performance and affordability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RU1J002YNTCL | ROHM Semicon... | 0.03 $ | 51000 | MOSFET N-CH 50V 0.2A UMT3... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...