RU1J002YNTCL Allicdata Electronics

RU1J002YNTCL Discrete Semiconductor Products

Allicdata Part #:

RU1J002YNTCLTR-ND

Manufacturer Part#:

RU1J002YNTCL

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 50V 0.2A UMT3F
More Detail: N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount ...
DataSheet: RU1J002YNTCL datasheetRU1J002YNTCL Datasheet/PDF
Quantity: 51000
3000 +: $ 0.02533
Stock 51000Can Ship Immediately
$ 0.03
Specifications
Vgs(th) (Max) @ Id: 800mV @ 1mA
Package / Case: SC-85
Supplier Device Package: UMT3F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 150mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
Vgs (Max): ±8V
Series: --
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 50V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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RU1J002YNTCL is a type of transistor manufactured by ON Semiconductor, a global leader in powering a connected world. It is a single flat package (SOP) transistor, which offers a low on-resistance and a fast switching speed compared to other transistors. This makes it an ideal choice for high-speed circuit designs, and it is also used in a number of consumer electronics applications.

A transistor can be broadly classified as either a bipolar transistor (BJT) or a field effect transistor (FET). RU1J002YNTCL is a FET, specifically an N-Channel Metal Oxide Semiconductor FET (MOSFET). A MOSFET works on the principle of electrostatic control and is generally driven by a voltage instead of current. It works by having a conductive channel formed between two electrodes (source and drain) while another electrode (gate) imposes an electric field to control the channel. When the gate voltage is applied, the channel forms and electrons are allowed to flow through the channel and onto the drain, thus turning the transistor on.

RU1J002YNTCL can be used in a variety of applications given that it possesses a relatively low on-resistance which allows it to switch and transfer more current with minimum losses compared to other transistors. It is typically used as a switch or power amplifier in many consumer electronics products such as cell phones, televisions, stereo systems and computers.

RU1J002YNTCL is a popular choice for applications that require both a low on-resistance, a low gate drive voltage, and a fast switching speeds. The device is perfect for high-speed circuit designs as it combines high-speed performance with lower on-resistance and low gate drive voltage. It is also ideal for high side drive applications due to its low gate drive voltage requirement and fast turn-on time.

Given its low on-resistance, fast switching speed and low gate drive voltage requirements, RU1J002YNTCL is an ideal choice for many applications, including consumer electronics such as cell phones, televisions, and audio systems. It is also perfect for high-speed circuit designs and is widely used in various high side drive applications. Ultimately, it is one of the most popular transistor choices in the market today, thanks to its performance and affordability.

The specific data is subject to PDF, and the above content is for reference

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