RU1C002UNTCL Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1V @ 1mA
Package / Case:	SC-85
Supplier Device Package:	UMT3F
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	150mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	25pF @ 10V
Vgs (Max):	±8V
Series:	--
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 200mA, 2.5V
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 2.5V
Current - Continuous Drain (Id) @ 25°C:	200mA (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

RU1C002UNTCL is a type of MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) transistor, which is used to control current flow in circuits. MOSFET transistors are the most commonly used type of transistor due to their highly efficient performance, low power consumption, low cost, and minimal heat dissipation. MOSFET transistors are also quite versatile, and can be used in a variety of different applications. The RU1C002UNTCL is a P-channel Enhancement Mode MOSFET, which means it is designed to operate in an on/off state, with minimal resistance when "on" and infinite resistance when "off".

Application Fields

RU1C002UNTCL transistors are widely used in a variety of applications, such as digital signal processing, signal amplification, power regulation, and motor control. Due to their low power consumption and low cost, they are also often used in consumer electronics, automotive electronics, and industrial digital signal applications. In digital signal applications, RU1C002UNTCL transistors are commonly used as switches or amplifiers, which can help to increase signal strength while reducing power consumption. Additionally, they are popular in motor control applications, where their high-speed responses and low power requirements make them ideal for controlling the flow of power to motors. Due to their low cost, RU1C002UNTCL transistors can also be used to provide low-cost power regulation and signal amplification for industrial, automotive, and consumer electronic applications.

Working Principle

The RU1C002UNTCL is a P-channel Enhancement Mode MOSFET, which means it works by controlling the flow of current through the gate of the MOSFET. The gate is the control element of the MOSFET, and is used to vary the amount of current flowing through the channel.When the gate voltage is high, it creates an "on" state, which allows current to flow through the channel. Conversely, when the gate voltage is low, it creates an "off" state, which prevents current from flowing through the channel. This is achieved by creating a voltage difference between the gate and the source (the end of the channel through which the current enters). The operation of the RU1C002UNTCL can be further improved by the addition of an electrical capacitance to the gate. The capacitance helps to stabilize the voltage of the gate, which can reduce the power consumption of the transistor.

Conclusion

RU1C002UNTCL transistors are an important type of MOSFET transistors, and are widely used in a variety of different applications. These transistors are capable of high-speed responses and low power consumption, making them ideal for controlling current in digital signal processing, signal amplification, power regulation, and motor control applications. Additionally, their low cost makes them an attractive option for many industrial and consumer electronic applications. The working principle of RU1C002UNTCL transistors can be further improved by the addition of an electrical capacitance to the gate, allowing for reduced power consumption.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description