Allicdata Part #: | RU1C-ND |
Manufacturer Part#: |
RU 1C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | DIODE GEN PURP 1KV 200MA AXIAL |
More Detail: | Diode Standard 1000V 200mA Through Hole |
DataSheet: | RU 1C Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 3V @ 250mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 400ns |
Current - Reverse Leakage @ Vr: | 10µA @ 1000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | -- |
Operating Temperature - Junction: | -40°C ~ 150°C |
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The RU 1C application field and working principle involve the utilization a rectifier, commonly known as a diode, in a variety of applications. Essentially, the RU 1C diode functions as a barrier preventing current from traveling in a certain direction by utilizing a number of components. The overall construction of a RU 1C diode contains layers of semiconductor material and a p-n junction which, when supplied with a voltage, works to control the flow of current.
The primary benefit of the RU 1C diode is the capability of blocking current flow from the negative to positive terminal which is known as reverse bias. This is advantageous in many applications because it prevents any unintended current or voltage from entering the system. In addition, the RU 1C diode is also commonly used as a “rectifier” to convert AC voltages into DC voltages. This is an extremely important application in the field of electronics since most other components operate using DC voltages.
In order to better understand the working principle behind the RU 1C diode, we must first identify the two primary layers of material used to construct the diode. The layers consist of an n-type semiconductor and a p-type semiconductor. When placed adjoining one another, the n-type semiconductor will present a negative charge while the p-type layer holds a positive charge. The negative and positive charges cancel each other out, forming a kind of bridge between the two layers.
When an applied voltage is supplied, the electrons within the n-type layer will move from the negative terminal and into the positive terminal. This effect is further enhanced by the junction of the two layers where electron diffusion and the band gap effect occur. These effects will act to accelerate the motion of electrons and prevent their return back into the layer of n-type material.
Due to the actions of the p-n junction and band gap effect, current is allowed to travel in the direction of the applied voltage. This process of allowing current in one specific direction while blocking current in the opposite direction is known as rectification and is one of the primary functions of the RU 1C diode. Additionally, the RU 1C diode is also capable of handling large currents in order to protect against short circuits and other dangerous scenarios.
In conclusion, the RU 1C diode is a component of immense importance in multiple applications, both industrial and consumer. Its ability to selectively control the current and voltage passing through the component, while also providing protection against any unwanted current, is critical to the field of electronics and its endless array of applications.
The specific data is subject to PDF, and the above content is for reference
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