S1BL MTG Allicdata Electronics
Allicdata Part #:

S1BLMTG-ND

Manufacturer Part#:

S1BL MTG

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 100V 1A SUB SMA
More Detail: Diode Standard 100V 1A Surface Mount Sub SMA
DataSheet: S1BL MTG datasheetS1BL MTG Datasheet/PDF
Quantity: 1000
22500 +: $ 0.02283
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Description

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What is S1BL MTG Application Field and Working Principle?

The S1BL MTG, or Metal-Oxide Semiconductor Field Effect Transistor (MOSFET), is a device used in many electronic applications. It is a three-terminal integrated circuit, often used as an amplifier, voltage regulator and a switch. It operates as a voltage-controlled current source and is able to handle both AC and DC power.The S1BL MTG is an especially useful device as it can handle high power levels and frequencies, allowing for efficient regulation and protection of the entire system. The S1BL MTG application field is mainly used for switching and current regulation, but it is also used in analog and digital signal processing, telecommunications, industrial heating and cooling, and automotive engines.The S1BL MTG operates under two basic principles: the gate-source voltage (VGS) and the drain-source voltage (VDS). When the gate-source voltage is increased, the flow of current is increased, resulting in a greater current flow when the drain-source voltage is reduced, and vice versa.The gate-source voltage is typically applied through a gate resistor, and the drain-source voltage is typically connected to the voltage source, such as a battery. When the gate-source voltage is sufficient, the gate-drain voltage (VSD) is created, and the current flow can be controlled.The S1BL MTG is constructed of a metal-oxide semiconductor feature that consists of source and drain electrodes that are isolated from each other by a layer of electrons. The MOSFET is divided into three separate regions: the body region, the drain region, and the source region.The body region consists of the semiconductor substrate material, the gate-drain voltage, and the charge on the gate-source. The drain region creates the path of current flow from the source to the drain electrodes. The source region connects to the source electrode and provides the charges that are used to control the current.The S1BL MTG allows current to flow through an amplifier or switch, either in one direction or both directions. The device works by controlling the current flow through the gate-source voltage, creating a voltage that is either positive or negative depending on the direction of current. The S1BL MTG can be used in a wide variety of applications, as it is designed to work with various input and output devices such as amplifiers, transistors, and operational amplifiers. It is also used in high power applications such as DC/DC converters and AC/DC converters.The S1BL MTG is also capable of providing accurate and efficient voltage control, which improves the overall efficiency of the system and ensures the system remains stable. This device is also used in automotive applications where it provides efficient power management and protection.To conclude, the S1BL MTG application field and working principle are beneficial in multiple applications, ranging from high power to low power. Its versatility, accuracy, and ease of operation make it an ideal choice for providing stability and control in a variety of environments. It is classified under Diodes - Rectifiers - Single.

The specific data is subject to PDF, and the above content is for reference

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