S1KLHRHG Allicdata Electronics
Allicdata Part #:

S1KLHRHG-ND

Manufacturer Part#:

S1KLHRHG

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 800V 1A SUB SMA
More Detail: Diode Standard 800V 1A Surface Mount Sub SMA
DataSheet: S1KLHRHG datasheetS1KLHRHG Datasheet/PDF
Quantity: 1000
20000 +: $ 0.02665
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Description

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Diodes are semiconductor devices used for rectifying and switching signals in applications ranging from consumer electronics to cell phones and medical equipment. Single diode rectifiers are commonly used for DC power supplies, in which the load current flows through a single diode to convert one type of electrical waveform to another.

Silicon controlled rectifiers (SCRs) are four-layer devices used to convert a DC voltage waveform into a more suitable waveform for the load. SCRs use a four-layer PNPN structure to control the current flow, without the need for a feedback-based control circuit. They are known for their ability to withstand higher loads, making them popular as power switches in industrial applications.

The SiKLHRHG diode is a single diode device designed for use in applications such as DC power supplies, AC-DC rectifiers, and switching applications. It is made from a silicon-germanium alloy, which allows for higher power-handling capabilities than ordinary silicon-based components. The device is capable of achieving forward voltage drop (VF) as low as 0.5V at currents up to 3Adc.

The principle of operation of SiKLHRHG diode is based on its four-layer PNPN structure, which consists of two P-type layers sandwiched between two N-type layers. When a positive voltage is applied to the device\'s anode and a negative voltage is applied to its cathode, the device will conduct current. This also enables it to act as a rectifier, converting AC power into DC power.

The SiKLHRHG diode is also capable of withstanding higher power loads, due to its higher voltage and current ratings. This makes it ideal for applications such as LED lighting, motor control, and power switching. Additionally, its high switching speed makes it a suitable choice for fast switching applications, such as mobile phone power supplies.

In summary, the SiKLHRHG diode is a single diode device designed for use in applications such as DC power supplies, AC-DC rectifiers, and switching applications. It is made from a silicon-germanium alloy, which allows it to operate at higher power, with lower forward voltage drop and higher switching speed than ordinary silicon-based components. This makes it suitable for use in LED lighting, motor control, and power switching applications.

The specific data is subject to PDF, and the above content is for reference

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