Allicdata Part #: | S1MBM4G-ND |
Manufacturer Part#: |
S1MB M4G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 1000V 1A DO214AA |
More Detail: | Diode Standard 1A Surface Mount DO-214AA (SMB) |
DataSheet: | S1MB M4G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.05001 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 12pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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A S1MB M4G is a type of diode rectifier. It is a silicon 4-layer rectifier module consisting of four silicon diodes connected in parallel, typically grouped together in a single package. These rectifiers are commonly used in the power electronics industry, where they are typically used in electrical motor control applications.
The four diodes forming a single-phase M4G are typically arranged in a common cathode (CCM) configuration or in a common anode (CAM) configuration, as shown in the diagram below. The number of rectifier diodes used in the module is determined by the rating of the M4G, which is typically specified as a peak repetitive reverse voltage (VRRM) or repetitive peak inverse voltage (VPR). The arrangement of the four diodes is also sometimes referred to as an ‘H-bridge’ configuration, due to its resemblance to the letter ‘H’.
The fundamental working principle of a single-phase M4G utilizes the voltage drop between the anode and the cathode of each diode in the module. When one of the two diodes in each link is forward biased, it allows the passage of current in the same direction, while blocking the current from passing through in the reverse direction. This creates a rectified voltage waveform containing only a forward-biased voltage wave for each of the two diodes.
Due to its four-layer construction, the S1MB M4G is able to provide superior current leakage and switching performance compared to traditional silicon diode rectifiers. Furthermore, the M4G is often more economical to manufacture than other types of rectifiers due to its rugged construction, making them suitable for use in a wide range of applications, such as solar cell, motor control, and UPS systems.
The S1MB M4G is also well suited for motor applications as it can achieve fast commutation times and can handle high peak currents. This makes them ideal for applications such as brushless DC motor drives and frequency inverters, where they are used to protect the DC bus from the reverse current from the motor.
The S1MB M4G is a type of single-phase diode rectifier module with four silicon diodes connected in parallel, typically arranged in a CCM or CAM configuration. The four diodes provide superior current leakage and switching performance when compared to traditional silicon diode rectifiers, making them suitable for a wide range of applications. Motor control and UPS applications are a particular area of application for the S1MB M4G due to their ability to handle high peak currents, fast commutation times and reverse current protection.
The specific data is subject to PDF, and the above content is for reference
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