
Allicdata Part #: | S1MLHR3G-ND |
Manufacturer Part#: |
S1MLHR3G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 1000V 1A SUB SMA |
More Detail: | Diode Standard 1A Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
10800 +: | $ 0.03014 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.8µs |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 9pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The S1MLHR3G is a specialized type of diode, a component that can be used to direct current (DC) flow in one direction in an electronic circuit. It is commonly referred to as a single rectifier component, and is part of the larger family of electronic diodes and rectifiers. The primary application field of the S1MLHR3G is in the automotive and communications fields, although other electronic technologies can benefit from its properties.
The primary functions of the S1MLHR3G are to control the voltage, current, and impedance in a circuit. Specifically, the component can be used to protect a circuit from short-circuiting and over-voltage scenarios. It can also provide steady DC power, even when an AC voltage source is present. In communications equipment, the component can be used to reduce interference by providing high levels of return-loss.
The basic principles of the S1MLHR3G are relatively simple. The component contains two terminals, referred to as anode and cathode, which are separated by a semiconductor material. When a voltage source is connected to the anode, the voltage at the anode will become slightly higher than at the cathode. This is due to the property of the semiconductor material, which absorbs electrons from the voltage source.
When the voltage at the anode is high enough, an electric current will begin to flow across the diode (the “forward bias”). This current will flow through the semiconductor material and out of the cathode until the voltage of the anode is equal to the voltage of the cathode. The forward bias then breaks, and the current flow stops.
The beauty of the S1MLHR3G lies in its ability to act as a unidirectional flow regulator. When the voltage source is connected to the anode, the current will only flow out through the cathode. Any reverse current will be blocked by the diode, preventing short-circuiting or other undesirable effects. The component also allows for high-frequency signal and pulse-width modulation in signals, ensuring that power requirements are met in a variety of applications.
The S1MLHR3G is an important component in the field of electronics. It can be used to control the voltage and current in a circuit, reduce interference, and provide protection from short-circuits and over-voltage scenarios. Its simplicity and effectiveness make it a useful component for a variety of applications, from automotive to communications.
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Part Number | Manufacturer | Price | Quantity | Description |
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S1MLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1000V 1A S... |
S1MLWHRVG | Taiwan Semic... | -- | 12000 | DIODE GEN PURP 1KV 1A SOD... |
S1MLHMQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1000V 1A S... |
S1ML RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1000V 1A S... |
S1MLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1000V 1A S... |
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S1MLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 1000V 1A S... |
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S1ML R3G | Taiwan Semic... | 0.04 $ | 10800 | DIODE GEN PURP 1KV 1A SUB... |
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