S2008V Allicdata Electronics
Allicdata Part #:

S2008V-ND

Manufacturer Part#:

S2008V

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: SCR NON-SENS 200V 8A TO-251AA
More Detail: SCR 200V 8A Standard Recovery Through Hole TO-251 ...
DataSheet: S2008V datasheetS2008V Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - On State (It (RMS)) (Max): 8A
Supplier Device Package: TO-251 (V-Pak/I-Pak)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
Current - Off State (Max): 10µA
Current - Hold (Ih) (Max): 30mA
Series: --
Current - On State (It (AV)) (Max): 5.1A
Voltage - On State (Vtm) (Max): 1.6V
Current - Gate Trigger (Igt) (Max): 15mA
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Voltage - Off State: 200V
Part Status: Discontinued at Digi-Key
Packaging: Bulk 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Thyristors are commonly used in applications such as high speed switching,precision timing control, and proportional control applications.In particular, one type of thyristor which has proven useful in many of these applications is the silicon controlled rectifier (SCR).

The S2008V SCRs are a type ofsilicon controlled rectifier that provides high speed switching, advanced timing control, and high voltage and current application capabilities. They are designed for use in high-current and high-voltage applications such as railroad, automotive, aerospace, and industrial automation. The S2008V SCRs feature fast turn on and off times and can control high frequency signals up to 500kHz with low losses over a wide temperature range.

The S2008V SCRs are constructed from three independent regions: anode, gate, and cathode. The anode and cathode regions are reverse-biased PN junctions, while the gate region is a heavily protected controlled PN junction. The anode-cathode junction is made up of four layers of semiconductor material that are sandwiched together. This combination of layers provides the SCR characteristics of high voltage blocking, current control, and switching.

The principle of operation of SCRs is based on the fact that, when the anode-gate junction is forward biased, and there is no voltage across the anode-cathode junction, current will flow through the device. When the current reaches the predetermined holding current, the device will remain in the on state until the anode-gate junction is reversed biased, or the current through the anode-cathode junction falls below the holding current.

In practical applications, SCRs are used in a variety of different ways depending on the application. For example, they may be used as sensors for detecting movement, as timing controls for regulating electrical power generation, or as switches for controlling the speed and amplitude of an electric motor. The S2008V SCRs can also be used to control current in power supply circuits and power conversion applications such as DC-DC converters, AC-DC converters, and AC-AC converters.

In summary, the S2008V SCRs are designed for a wide range of applications that require high speed switching, advanced timing control, and high voltage and current. They are characterized by their fast turn on and off times and can control high frequency signals up to 500kHz with low losses over a wide temperature range.

The specific data is subject to PDF, and the above content is for reference

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