S2012V Allicdata Electronics
Allicdata Part #:

S2012V-ND

Manufacturer Part#:

S2012V

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: SCR NON-SENS 200V 12A TO-251AA
More Detail: SCR 200V 12A Standard Recovery Through Hole TO-251...
DataSheet: S2012V datasheetS2012V Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - On State (It (RMS)) (Max): 12A
Supplier Device Package: TO-251 (V-Pak/I-Pak)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 120A
Current - Off State (Max): 10µA
Current - Hold (Ih) (Max): 40mA
Series: --
Current - On State (It (AV)) (Max): 7.6A
Voltage - On State (Vtm) (Max): 1.6V
Current - Gate Trigger (Igt) (Max): 20mA
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Voltage - Off State: 200V
Part Status: Discontinued at Digi-Key
Packaging: Bulk 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A Thyristor- SCRs (Silicon controlled rectifier) is one of the most popular switching devices used in electrical engineering. The S2012V is a particular type of SCRs and it has a wide range of applications in various fields. It is a 3 phase SCR with a reverse breakdown voltage (VDRM) of 2000V. This type of SCR is suitable for a DC line or AC line applications.

The S2012V is frequently used for direct current and pulsed current applications such as heating, welding, and power controllers. It is also used for power supply applications and automotive applications. The S2012V has some excellent features, such as very fast switching, good thermal response, and overcurrent protection.

The S2012V works on the principle of the P-N junction diode. It is a four-layer semiconductor device that is composed of a P-type and an N-type layer. As the voltage across the P-N junction increases, the diode starts to conduct. The SCR is triggered by injecting a small current into the gate terminal. This current causes the device to abruptly switch from a blocking state to a passing state. This allows large currents to flow through the SCR.

Another unique feature of the S2012V is its fast switching time. It has a turn-on switching time of 4uS and a turn-off time of 6uS at an on-state current of 2A. This means that it can be used for applications requiring fast switching cycles. The S2012V also features excellent thermal response due to its thermal resistant design.

The S2012V has many applications in the field of solar energy. It can be used as a boost converter, a DC-DC converter, or an inverter. It is also suitable for use in LED lighting systems, which typically use low voltage direct current. In addition, it can be used as a motor controller in applications such as electric vehicles and robotics.

Finally, the S2012V can also be used in triggering precision control in industrial processes such as heat treating and hardening. This is because it offers reliable, repeatable control and does not require extensive calibration. In conclusion, the S2012V is a versatile, reliable, and efficient SCR that is suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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