S29AS008J70WEI049

Memory: S29AS008J70WEI049 Application Field and Working Principle

S29AS008J70WEI049 is an 8-megabit Flash Memory device that provides an efficient data storage solution for applications such as consumer, automotive and industrial devices. This product is part of the Advanced SpansionTM family of Flash devices. It has the ability to execute code directly from the memory, which eliminates the need for an external RAM device.

Features and Benefits

The S29AS008J70WEI049 offers several features that can benefit electronic system designs, including:

• High density – 8-megabit density contained in a small five-by-five memory array
• Low power consumption – low active power and low standby power
• High speed – fast random access and page closes times
• Easy to use – no process steps required for full erase
• Programmable – programmable via standard ISP programming methods

Application Field

The S29AS008J70WEI049 can be used in a variety of applicarion fields including consumer, automotive and industrial. In a consumer application, this memory device may be used to store firmware and other data such as music, video and images. This device can also be used in the automotive space to store programming information for body, chassis and powertrain control systems. In industrial applications, the device can be used to store data in applications like machine monitoring and control.

Working Principle

The S29AS008J70WEI049 is a NAND Flash memory device. This type of memory works by storing charge in a floating gate oxide of a transistor. When a voltage is applied to the transistor, it changes the charge stored in the floating gate. This charge, in turn, changes the threshold voltage of the transistor. This change in the threshold voltage is used to indicate logic levels.

The programming sequence for this device involves the following steps:

• Erase – the memory cell is erased by applying a voltage to it
• Program – a binary pattern is stored in the memory cell
• Verify – the stored data is verify, ensuring the data was correctly written to the memory cell

This cycle can be repeated multiple times over the life of the device. Flash memory has a limited write/erase cycle life and data must be written and verified properly in order to ensure reliable data storage over the life of the device.

Conclusion

The S29AS008J70WEI049 is an 8-megabit Flash Memory device that provides a valuable data storage solution for a variety of applications. It features a high density, low power consumption, high speed and easy programming, making it ideal for consumer, automotive and industrial applications. The device operates using NAND Flash technology, wherein charge is stored on a floating gate that changes the threshold voltage of the transistor. The programming cycle for the device involves erase, program and verify steps. This cycle can be repeated multiple times over the life of the device.