S29AS016J70BHIF30 Allicdata Electronics
Allicdata Part #:

S29AS016J70BHIF30-ND

Manufacturer Part#:

S29AS016J70BHIF30

Price: $ 1.29
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 16M PARALLEL 48FBGA
More Detail: FLASH - NOR Memory IC 16Mb (2M x 8, 1M x 16) Paral...
DataSheet: S29AS016J70BHIF30 datasheetS29AS016J70BHIF30 Datasheet/PDF
Quantity: 1000
416 +: $ 1.16847
Stock 1000Can Ship Immediately
$ 1.29
Specifications
Series: AS-J
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8, 1M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (6x4)
Description

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The S29AS016J70BHIF30 is a type of memory chip. This type of memory is utilized in many different types of applications, and its working principle is similar to that of other types of memory chips. This article will discuss the application field of this type of memory, as well as its working principle.

Application Field

S29AS016J70BHIF30 memory chips are widely used for multiple application fields. This type of of memory is designed for use in systems where requiring a reliable and cost-effective nonvolatile flash memory solution. It is known for its high density of 16 megabytes, which is suitable for use in many industrial and embedded systems. This type of memory is ideal for a variety of applications, such as PC based systems, digital set top boxes, digital cameras, and automotive systems that require secure data storage. With its low power consumption and small form factor, this type of memory is also great for use in mobile computing devices such as tablets and smartphones.

Working Principle

The S29AS016J70BHIF30 memory chip utilizes NOR flash memory technology. This type of memory has many advantages, such as the ability to quickly erase, rewrite and read data, the low power consumption, and the very fast read speeds. However, the main advantage of using NOR flash memory is its low cost compared to other types of memory. NOR flash memory also enables fast random access, which makes it ideal for applications that require multiple random accesses to the memory.

NOR flash memory works by using two transistors to control the flow of electrons within the chip. When a logical “1” or “0” is written to the chip, the electrons are discharged or charged through a tunnel junction, respectively. The tunnel junction is essentially a conducting pathway between the two transistors of the chip. As electrons flow through the tunnel junction, a detectable voltage at the other end of the tunnel junction can be read as either a “1” or a “0”. This process is known as “capacitive tunneling” and is the foundation of the working principle of NOR flash memory.

The S29AS016J70BHIF30 memory chip uses a wide variety of advanced technologies to provide a reliable and cost-effective solution for data storage. It is designed with a high read speed of up to 850 Mbps and its low power consumption enables it to be used for portable devices. The chip also has advanced error correction and built-in program/erase capability.

Conclusion

The S29AS016J70BHIF30 memory chip is a type of NOR flash memory that is widely used for multiple application fields. It has many advantages, such as its low cost and low power consumption, its ability to quickly erase, rewrite and read data, and its fast random access. The working principle of this type of memory is based on capacitive tunneling and the flow of electrons within the chip. Overall, the S29AS016J70BHIF30 provides an efficient and reliable solution for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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