S29AL016J55TFIR10

The S29AL016J55TFIR10 is a 16Mb 3V CMOS boot sector Flash Memory device. This flash memory device incorporates flexible erase and program functions and is specifically designed for low cost applications. Because of its memory size, this device is making a great impact in the memory chip field. It also provides a good range of features and functions, making it suitable for many applications.

S29AL016J55TFIR10 Application field

The S29AL016J55TFIR10 memory is widely used in various devices and applications such as MP3 player, digital camera, digital video camcorder, wireless communication system and automotive applications. This device can also be used in systems or devices that require small amounts of nonvolatile memory, such as medical devices, security systems and display systems.

It has reliable read and write performance and a complete range of bit controls and error detection mechanisms. Moreover, it provides a simple user interface and high-speed operations with low power consumption, making it ideal for high density storage applications. It also provides fast random access and a broad array of sector protection features.

S29AL016J55TFIR10 Working Principle

The conventional S29AL016J55TFIR10 memory architecture consists of four blocks, each containing four sectors with a total of 128K bytes. In addition, the device can be configured to use the boot sector enable or boot sector disable option. When the boot sector mode is enabled, a selected sector can be booted in when the device is powered on. All write operations must always begin with a pre-erase operation in order to prevent undesired programming. An erase operation can be performed on multiple blocks or all blocks at once.

In order to read data from the memory, a read array command is issued. This command is followed by the desired address, which is in a multiple of 9 bits. Once the read array command is received, the device will then enter the read mode, allowing data to be retrieved from the designated address. The data is then sent out in multiplexed form, one bit for each signal line. The data stream continues until the end of the data that is being read.

In order to write data to the memory, a write array command is issued. This command is followed by the desired address and the data byte to be stored. The data byte will be latched on the rising edge of the write strobe. During data storage, the write strobe will be held low for two cycles, after which it will return to high. Once the write strobe is released, the device goes back to its read mode.

The S29AL016J55TFIR10 Memory also supports a page program-erase and program synchronous read modes. Page program-erase is enabled by issuing a page program-erase command. This command starts the memory operation, which enables the user to write up to 32 bytes of data sequentially on a page before erase occurs. This mode is highly recommended for applications that requiring faster writing operations.

Synchronous read mode of the S29AL016J55TFIR10 memory enables faster data transfer than asynchronous read mode. This is done by sending address, command and data on separate address, command and data lines, respectively. This mode also enables the user to read or write data in a sequential manner without suspending the read or write operation. This makes this memory device ideal for high speed data transfer applications.

Conclusion

The S29AL016J55TFIR10 memory is widely used in various devices and applications due to its reliable read and write performance, low power consumption, fast random access and a broad array of sector protection features. It has a simple user interface, high speed operations and is suitable for high density storage applications. It supports two modes, asynchronous read mode and synchronous read mode, allowing for faster data transfer. This makes it very suitable for many applications where maximum data transfer speed is important.