S29AL008J55TFIR10

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S29AL008J55TFIR10 is a high-density Flash memory and is typically used in applications such as automotive, consumer, industrial, and medical environments. The memory is stackable through a “pin in-window” configuration, which means it can be mounted straight onto a WLCSP without additional PCB support required. It provides a cost-effective solution for increasing system memory with low power requirements.The S29AL008J55TFIR10 memory is fabricated in a 55nm CMOS technology, providing maximum capacity of up to 64Gb, and delivers excellent performance with low power operation at only 1.8V read/write. It also supports a wide range of operating frequencies from 66MHz to 133MHz. The densities available are 8Mb, 16Mb, 32Mb, and 64Mb, and the device comes in a WLCSP package size of 8x8 or 10x10.The device also features low power write enable circuitry, which eliminates power consumption during write operations. It has a sector-wise/block-wise erase and programming capability as well as burst read/write capability which helps to increase data throughput and reduce overall system power. In addition, it supports advanced error correction codes (ECC) to improve data reliability.To ensure data protection, the device is designed with power-on reset protection, fast protection against inadvertent operations, and advanced protect block operation (APB) for secure storage of critical data. The operation temperature range is from -40C to +125C (Tcase), making it suitable for most applications.The S29AL008J55TFIR10 memory also contains an integrated memory controller, which provides an interface between the system logic and the memory array. The controller is programmed by software through an I/O port, allowing the user to configure the device to their particular system requirements.The memory works on a principle of storing and retrieving data through transistors. The transistors act as switches to write and read data in the form of electrical signals. When a particular location in the memory is accessed, the memory controller sends a signal to change the state of the transistor at that location, either turning it on or off. When writing data, the input signal is encoded and stored in the corresponding location. This involves changing the state of the transistor from off to on in order to store the data. When reading data, the memory controller sends a signal to the corresponding circuit and the transistor turns from a “1” to a “0” state. This allows the data to be accessed and read from the memory cell.The S29AL008J55TFIR10 memory provides an ideal solution for considerable increase in system memory with low power consumption and improved reliability, making it ideal for applications such as automotive, consumer, industrial, and medical. The device is small, low-power, and cost-effective, and provides the highest levels of data protection and reliability.

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