S29CD016J0MFAM113

Series:	CD-J
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	16Mb (512K x 32)
Clock Frequency:	56MHz
Write Cycle Time - Word, Page:	60ns
Access Time:	54ns
Memory Interface:	Parallel
Voltage - Supply:	1.65 V ~ 2.75 V
Operating Temperature:	-40°C ~ 125°C (TA)

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Introduction

S29CD016J0MFAM113 is a Non-Volatile Memory device that belongs to the S29CD016J0M family. This family is comprised of Non-Volatile Memory devices that have been created by Toshiba Corporation, a global leader in the design, manufacture, and supply of memory solutions. This memory device offers users superior performance and is ideal for a wide range of applications. It offers a read-only memory (ROM) capacity of 16 megabits, as well as a separate memory bank for data storage. The read-only memory (ROM) allows for efficient code execution, while the additional memory bank allows for data to be stored securely.

Application Fields

The S29CD016J0MFAM113 memory device can be used in various applications. These include industrial automation, automotive and medical, automotive, industrial and consumer applications. The device has a high-speed random read capability, with an access time of 70ns and an extended data retention period of 20 years. It offers high current capacity as well as a low power consumption, making it an ideal solution for applications in which power consumption is an important factor. Additionally, the S29CD016J0MFAM113 can be used in real-time operating systems and digital signal processor (DSP) applications.

Working Principle

The S29CD016J0MFAM113 memory device is a Non-Volatile Memory (NVM) device that uses a two-transistor cell for storing information. The two-transistor cell consists of two N-channel MOSFETs (nMOS). Each cell has two gates and a drain terminal. Information is written onto the cell by controlling the gate voltages of the two transistors. When a 0V gate voltage is applied to the first transistor, the drain terminal of the cell goes to a low state, representing a 0 bit. When a ~4V gate voltage is applied to the first transistor, the drain terminal of the cell goes to a high state, representing a 1 bit. The information stored on the cell is retained even when power is removed. This makes the S29CD016J0MFAM113 an ideal solution for applications that require high levels of data retention.

Conclusion

In conclusion, the S29CD016J0MFAM113 Non-Volatile Memory device is a perfect solution for applications that require high levels of data retention, such as industrial automation, automotive, medical and consumer applications. This memory device offers a read-only memory capacity of 16 megabits and a separate memory bank for storing data securely. It is capable of high-speed random read capability, with access times of 70ns and extended data retention periods of 20 years. Additionally, it offers a low power consumption, making it ideal for a wide range of applications.

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