S29CL032J0RQAI030

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• S29CL032J0RQAI030 Application Field and Working Principle
• Memory
  • S29CL032J0RQAI030 Application Field

  The S29CL032J0RQAI030 is a CMOS-based, 32-megabit, electrically erasable and programmable memory, ideally suited for a wide range of applications including data storage, code storage, program code storage and data logging. The device features an extended operating temperature range, industry-standard pin-outs and a single 3.3V supply voltage, making it ideally suited for embedded applications where power and space are limited.

  The device\'s 32 megabit capacity provides significant savings on cost and board space. With security features such as block lock, sector lock and Software Data Protection, enhanced reliability and data protection can be achieved for applications including automotive, industrial, medical, multimedia, mobile and consumer electronics.

  • S29CL032J0RQAI030 Working Principle

  The S29CL032J0RQAI030 utilizes a 4-bit, high-speed metal-oxide semiconductor (MOS) technology, designed to operate in the range of -45°C to +125°C. The device consists of 168 sectors, each containing 512 bytes. In order to program or erase the memory, the electrons stored in each memory cell are transferred to and from the source through inversion of the gate charge. This process - known as Fowler-Nordheim Tunneling - is controlled by the programming voltage and current.

  The S29CL032J0RQAI030\'s sector architecture allows individual, full-sector or multiple sector erasing and programming operations. In addition, the device features an array of features including fast programming and erasing times, single 3.3V supply for core and I/O, plus built-in self-test and data protection features for enhanced reliability. This memory is also capable of reading, verifying and erasing/programming data in a single operation, known as "background mode". All of these features make the S29CL032J0RQAI030 a very cost-effective and reliable memory device.

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