Allicdata Part #: | S29GL01GP11FFIR23-ND |
Manufacturer Part#: |
S29GL01GP11FFIR23 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 1G PARALLEL 64BGA |
More Detail: | FLASH - NOR Memory IC 1Gb (128M x 8) Parallel 110... |
DataSheet: | S29GL01GP11FFIR23 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | GL-P |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 1Gb (128M x 8) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-Fortified BGA (13x11) |
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The S29GL01GP11FFIR23 is a high-performance NOR flash memory device specifically designed to satisfy the memory needs of today\'s embedded systems. It is an ideal choice for a variety of industrial, automotive, and consumer applications, offering high performance, reliability, and affordability.
The S29GL01GP11FFIR23 is a high-performance mobile-oriented NOR flash memory device. It is designed to provide a high-speed, high-capacity, low-power memory solution for a wide range of embedded systems. The device is 8-bit multiplexed and has a programmable 3-wire serial interface, limited instruction set, and fast Program and Erase cycles of 60ns or less.
The S29GL01GP11FFIR23 is a single-supply device that operates from a 2.7V to 3.6V supply. It also has a fast clock frequency of up to 60MHz which allows for faster access times. The device has a large storage capacity, with a total of 64Mbit of NOR Flash memory, divided into 4 Sectors. The Sector sizes are 16Mbit, 32Mbit, 32Mbit, and 8Mbit.
The S29GL01GP11FFIR23 has many features that make it an ideal choice for embedded systems applications. It has a low power consumption, provides fast on-chip erase and data programming, and is a byte-level device with a byte-write times of 20ns. It also has an integrated control logic for wear-leveling and programmable timing for device operations. Additionally, the device provides data security with its internal specialized copy protection circuitry.
The S29GL01GP11FFIR23 offers a wide array of application fields and is suitable for a variety of embedded system designs. It can be used in automobiles, digital televisions, and medical equipment. It is also well suited for industrial and security applications, featuring integrated protection and data security features. Additionally, the device is an ideal choice for mobile devices, providing high speed and low power.
The working principle of the S29GL01GP11FFIR23 is based on the use of memory cells. Each memory cell is made up of two transistors, a control transistor and a data transistor. The control transistor acts as a switch to control the reading and writing of data from and to the memory cells. A voltage is applied to the gate of the control transistor to turn it on, and this controls the flow of electrons in and out of the memory cell, allowing for data to be read, written, or erased.
The S29GL01GP11FFIR23 provides a fast and low-cost memory solution for a wide range of embedded applications. It offers high performance, reliability, and affordability, making it an ideal choice for embedded system designs. With its fast program and erase cycles, data security features, and integrated control logic, the S29GL01GP11FFIR23 is an ideal choice for industrial, automotive, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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