S29GL256N10FFI010 Allicdata Electronics
Allicdata Part #:

S29GL256N10FFI010-ND

Manufacturer Part#:

S29GL256N10FFI010

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH
More Detail: Memory IC
DataSheet: S29GL256N10FFI010 datasheetS29GL256N10FFI010 Datasheet/PDF
Quantity: 4590
Stock 4590Can Ship Immediately
Specifications
Series: *
Part Status: Active
Description

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Introduction to S29GL256N10FFI010
The S29GL256N10FFI010 is a member of a family of high-performance flash memory devices from Spansion. It is a single-die 16 Megabit nonvolatile memory device organized as 256K Words of 8 bits each. This flash memory device is available in a package that is compatible with the standard JEDEC small outline package (TSOP). The S29GL256N10FFI010 enables fast reading, simple architectures and low power dissipation. It also enhances production testing, system as well as software debug. The S29GL256N10FFI010 is an ideal choice in consumer, industrial, medical and automotive applications.
S29GL256N10FFI010 Application Field
The S29GL256N10FFI010 is widely used in telecommunications and consumer applications, where large non-volatile memories are needed. It can be used in digital television, DVD players, and telephones. As it has a low power consumptions and fast readout speed, this flash memory device is also suitable for applications such as industrial embedding systems, portable consumer products, etc. Additionally, the S29GL256N10FFI010 can be used in communication technologies such as satellite navigation systems, cellular phones, wireless transceivers, industrial controllers and automotive equipment. Its small form factor also makes it suitable for use in laptops, tablets, and smartphones.
S29GL256N10FFI010 Working Principle and Characteristics
The S29GL256N10FFI010 utilizes a multiplexed address/data bus to reduce address line count and component count in low pin count applications. It is organized as 256K x 8 and is fabricated using a advanced CMOS technology for high reliability. This nonvolatile memory device enables byte, page, and block erasure to allow users to freely program and erase data. It features a low 50ns typical read-cycle time from reset with 10ns access time of the individual byte. The S29GL256N10FFI010 also offers high erase cycle durability of up to 1000 cycles before failure. Furthermore, the flash memory device has a power consumption of 2.5 mA typical active current.
The S29GL256N10FFI010 supports an industry standard 3.3V Vcc operation power supply. This device has a wide temperature range of -40 to +85 °C and offers a high grade of reliability with a ECC error correction system. The S29GL256N10FFI010 also has an operating endurance of up to 200 M write-erase cycles and a data retention of up to 20 years. Additionally, it has a secured sector which can be locked and erased whenever required. This nonvolatile memory device also come with an exclusive power-up detection feature for hard reset function.
The S29GL256N10FFI010 provides a host of features to ensure the highest level of performance and reliability. It features a 3-byte accelerated write command, sector LOCK mechanism, hardware reset circuit, and very low standby power consumption. Additionally, this memory device also offers high data security with the incorporated ECC mechanism. This device also contains an internal CRC engine to detect data integrity.
In summary, the S29GL256N10FFI010 is a highly reliable and cost-effective single-die 16 Megabit nonvolatile flash memory device. This nonvolatile memory device offers fast reading, low power consumption, and advanced flash memory features like byte, page, and block erase. Additionally, the S29GL256N10FFI010 is capable of reliable data retention with its powerful ECC error correction system. As such, it is a great choice for applications such as industrial controllers, mobile phones, digital TV, and automotive equipment.

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