Allicdata Part #: | 1274-1082-ND |
Manufacturer Part#: |
S29GL128S90FHI020 |
Price: | $ 3.24 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 128M PARALLEL 64BGA |
More Detail: | FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 90... |
DataSheet: | S29GL128S90FHI020 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 2.94210 |
Series: | GL-S |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (8M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 90ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-BGA (11x13) |
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Application Field and Working Principle of S29GL128S90FHI020
S29GL128S90FHI020 is a type of high-performance non-volatile memory device with wide application fields, manufactured by Spansion, which is well-known for its lean NAND architecture and advanced security solutions. The device offers performance and reliable data storage solutions for both embedded and consumer applications such as Wearables, Smartphones, Home Appliances, Industrial and Automotive Systems.
S29GL128S90FHI020 is available in a BGA-90 package with a small size of only 10mm x 10mm x0.8mm, making it an ideal solution for a wide range of small form factor designs. It provides a wide operating temperature range of -40 to +105℃, allowing it to perform reliably in environments with extreme temperature conditions. In addition, it has an endurance of 10k write cycles and consumes extremely low power while operating, making it suitable for various types of applications that require long battery life.
Working Principle
S29GL128S90FHI020 utilizes a NAND flash memory architecture to store data, which works by utilizing a NAND cell array, consisting of two transistors placed between two select lines. When the select lines are enabled, electrical current flows between the two transistors, and the current flow corresponds to a logical 1 (High) or 0 (Low). The NAND array is organized into pages, which are the smallest unit of data that can be written or read in the array. Each page can store up to 2048 bytes of data consisting of 1,024 “bricks” of 8-bit data. Writing and reading of a page can be done in a single operation. The device also consists of a controller, which is responsible for managing the operations of the memory unit, such as read, write, erase, and program operations.
The controller maintains the data integrity by managing the read/write addresses, ECC and implementing wear leveling, to ensure that the data stored in the device remains intact. In addition, the controller will perform a write/erase operation to the device when necessary, in order to keep the device as up-to-date as possible. With its low power consumption, wide operating temperature range, high endurance and robust data management, S29GL128S90FHI020 is an ideal device for various applications that require reliable data storage solutions.
The specific data is subject to PDF, and the above content is for reference
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