S29GL01GS11DHV020 Allicdata Electronics
Allicdata Part #:

S29GL01GS11DHV020-ND

Manufacturer Part#:

S29GL01GS11DHV020

Price: $ 6.97
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL 64BGA
More Detail: FLASH - NOR Memory IC 1Gb (64M x 16) Parallel 110...
DataSheet: S29GL01GS11DHV020 datasheetS29GL01GS11DHV020 Datasheet/PDF
Quantity: 1000
260 +: $ 6.33446
Stock 1000Can Ship Immediately
$ 6.97
Specifications
Series: GL-S
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (64M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-Fortified BGA (9x9)
Description

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S29GL01GS11DHV020 Memory Application Field and Working Principle

S29GL01GS11DHV020 Overview
S29GL01GS11DHV020 is a single voltage flash memory device with a density of 1 Gbit (128 Meg x 8 Bit) and a programmable feature of up to 83 MHz clock frequency. The device also provides high performance programming and reading capability of up to 166 MHz clock frequency and is supported by multiple advanced technologies such as Page Program, individual sector Erase, write protect Ready/Busy status signals and Page Pre-read capability.

Application Field of S29GL01GS11DHV020 Memory
S29GL01GS11DHV020 memory is mainly used in digital TV and HDTV set-top boxes, car navigation systems, industrial controls, medical equipment and audio/video products.With its higher read/write speed, smaller footprint and lower power consumption, S29GL01GS11DHV020 is an ideal solution for applications needing large amounts of data storage. This can help reduce the cost and complexity of hardware implementations and create more attractive products for customers.

Working Principle of S29GL01GS11DHV020 Memory
S29GL01GS11DHV020 memory is composed of 1 Gb of NAND-style cells arranged in 128 Mbit blocks. Each cell can store one bit of data and is divided into four groups. The memory can be programmed or erased by individual cells or groups of cells. Each group of cells is programmed or erased in blocks. To write data to the S29GL01GS11DHV020 memory, the device first goes into the Program operation and then the data is supplied to the memory cells as a series of pulses on the data pins. The devices Data In pins are pre-charged before data information is written.In order to read data from the S29GL01GS11DHV020 memory, the device first goes into the Read operation and then the data is transferred from the memory cells through the data lines in the DOUT pins.S29GL01GS11DHV020 memory also provides a page read mode which allows faster read cycles and a program mode which allows multiple pages to be programmed faster.

Conclusion
S29GL01GS11DHV020 memory is a single voltage flash memory device with a high density of 1 Gbit (128 Meg x 8 Bit). It is an ideal solution for applications needing large amounts of data storage due to its higher read/write speed, smaller footprint and lower power consumption. The memory is mainly used in digital TVs, set-top boxes, medical equipment, industrial controls and audio/video products.

The specific data is subject to PDF, and the above content is for reference

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