S29GL01GT10TFA013

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

As a member of the S29GL Flash family, S29GL01GT10TFA013 is a single power supply NOR Flash, and is a non-volatile memory (NVM) typically used for code storage to provide fast random access and deferred execution.S29GL01GT10TFA013Flash memory has an application field in automotive, industrial sector, consumer electronics and telecommunications, etc.

The features of S29GL01GT10TFA013 are as follows: It has an edge array with multiple cell density options; it features an easy to use and highspeed pipeline architecture; it provides high reliability, superior gold wire bonding and ultra-thin package. In terms of reliability, S29GL01GT10TFA013 also features a secure erase function, which protects data and ensures endurance.

The most distinct feature of S29GL01GT10TFA003 is its working principle. It has a single power supply and can operate within a voltage range of 2.7V – 3.6V. It operates with half a clock cycle of the flash accelerator (FA) and has a floating gate cell as its Flash cell structure. As such, it can execute high speed writes and reads. The write time consists of three steps: erase, write program, and verify.

The erase process involves injecting charge into the floating gate cell to remove the stored charge, then releasing the floating gate electrons to clear charging. The program step involves injecting electrons back into the floating gate cell to store more charge. Finally, the verify process is used to perform comparison between the written data and the previously stored data in memory. If found there is a discrepancy, corrections can be made.

The read process also takes three steps. First, it will detect the voltage of the floating gate cell. Then, the FA compares the voltage to a certain reference voltage. Finally, the data is detected which serves as the output read operation. In addition, S29GL01GT10TFA003has a very low standby current of 5uA.

In conclusion, S29GL01GT10TFA013is a NOR Flash memory with a wide range of applications. It has a single power supply and operates with a voltage range of 2.7V – 3.6V. It has a dynamic floating gate cell structure and a high speed pipeline architecture. Its write and read process consists of three steps. Alongside its high speed write and read functionalities, it also features a secure erase function, which ensures data protection and endurance. Its standby current consumption is also very low at 5uA.

The specific data is subject to PDF, and the above content is for reference