S29GL128P11FFIV20

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S29GL128P11FFIV20 memory is a non-volatile memory type. The eighth generation GL (Gigabit Low Density) products use the existing S29GL family architecture, a new 0.13 um process and advanced signal reliability features. The products provide a high level of write/erase cycle endurance and data retention. Each GL family device features a high speed page read for burst and random access to data stored in Flash.

S29GL128P11FFIV20 provides a medium density range from 32Mb and up to 128Mb. It is based on 3-V NAND Flash technology that can provide high performance, low power, and cost optimized solutions. Advanced read/write operations and a high level of reset/retention reliability make S29GL128P11FFIV20 memory an ideal solution for use in embedded applications, such as Automotive, Industrial, and our Smart Mobile market segments.

S29GL128P11FFIV20 memory offers a wide range of applications. For example, automotive, industrial, embedded system and IoT (Internet of Things) applications. Automotive application includes navigation system, camera adjusting, navigation and ECU systems, while in industrial, it includes temperature and pressure measuring, data measuring, embedded sensor applications. Moreover, this memory has wide application in intelligent mobile device, such as smart phones and wearable devices.

The working principle of S29GL128P11FFIV20 memory depends on the three step structure, which is Read/Write, Erase and Program. Read/Write operations are executed by addressing the memory array, then data are read from or written to the memory. Erase operation is performed to erase the blocks of data before reprogramming the data. Finally, a program operation is done to program the memory locations with particular data.

In conclusion, S29GL128P11FFIV20 memory is an ideal solution for low power consumption and medium density storage applications, such as automotive and industrial applications, since it provides high performance, low power consumption and cost optimized solutions.

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