S29GL128P90FFIR12 Integrated Circuits (ICs)

Introduction: Memory devices are essential components in modern digital integrated circuit designs. The S29GL128P90FFIR12 is a high-performance, high-density, flash memory device from Spansion, Inc. It is a multi-level cell (MLC) devices which offer versatile erase and programming levels for a wide range of embedded memory applications. This article will discuss the application field and working principle of S29GL128P90FFIR12 Flash Memory device.

Application Field of S29GL128P90FFIR12: The S29GL128P90FFIR12 is designed to be used in a variety of memory applications, including but not limited to, removable flash memory cards, portable hard drives, non-volatile memory solutions for embedded systems, new applications for mobile and consumer products, and low-power applications for battery-powered systems. This device can also be used in automotive, handwriting/signature recognition, industrial automation, medical instrumentation, mobile phones, PDAs, USB flash drives, and many other applications. The S29GL128P90FFIR12 is offered with a wide range of densities, package types, sector sizes, and operating voltages, to provide the flexibility and optimization needed for any memory application.

Features of S29GL128P90FFIR12: The S29GL128P90FFIR12 is a Flash memory device that offers a wide variety of Advanced Features:

• High Performance: The S29GL128P90FFIR12 is capable of reading and programmed 75MHz, with programming time a mere 100 µs.
• High Reliability: The S29GL128P90FFIR12 utilizes an advanced chip architecture and features a hard wear protection feature that helps protect the part from wear and tear due to frequent on-off cycling.
• High Density: The S29GL128P90FFIR12 comes in a double-level cell (DLC) design, allowing for a high memory density in a low-power, low-cost package.
• Low Power Consumption: This Flash memory device requires only 1.2 V to 3.6 V operating voltage, which makes it ideal for applications where power consumption is critical.
• High Endurance: The S29GL128P90FFIR12 is designed to be extensively durable and has an endurance of greater than 10,000 program/erase cycles.
• Low Voltage Operation: The S29GL128P90FFIR12 operates at low voltage of0.6 V, which reduces the quiescent current, and increases the system efficiency.

Working Principle of S29GL128P90FFIR12: The working principle of S29GL128P90FFIR12 Flash Memory device is divided into three main stages: program, erase, and read. Before any data can be written, the Flash memory must be erased. The erase operation is performed by voltage-controlled tunneling of charge carriers across a thin oxide layer. Once the Erase operation is completed, programming can begin. Programming is done by injecting charge into the oxide layer of the Flash cells. The injected carriers are confined inside the oxide layer, and this process is referred to as Fowler–Nordheim tunneling. Finally, the Read operation is done by sensing the voltage level of each cell and comparing it to a reference voltage. The S29GL128P90FFIR12 uses a page read approach, which means that the entire page is read out and stored in the sense amplifiers. For a page size of 512 bytes, it takes only 800nS to read out the entire page.

Conclusion: The S29GL128P90FFIR12 is a versatile and highly reliable Flash memory device for a wide range of embedded memory applications. It offers a variety of advanced features such as high performance, high density, low power consumption, and high endurance. The principle of operation involves three main stages of program, erase, and read. The S29GL128P90FFIR12 has a page read approach, which enables it to read out a page of 512 bytes in only 800nS. Thus, the S29GL128P90FFIR12 is an ideal candidate for a wide range of memory applications.